2SC793R
Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC793R
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 60
W
Maximum Collector-Base Voltage |Vcb|: 100
V
Maximum Collector-Emitter Voltage |Vce|: 80
V
Maximum Emitter-Base Voltage |Veb|: 5
V
Maximum Collector Current |Ic max|: 7
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 5
MHz
Collector Capacitance (Cc): 400
pF
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package:
TO3
2SC793R
Transistor Equivalent Substitute - Cross-Reference Search
2SC793R
Datasheet (PDF)
9.3. Size:142K jmnic
2sc792.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC792 DESCRIPTION With TO-3 package High breakdown voltage APPLICATIONS For voltage regulator,inverter,switching mode power supply applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=) SYMBOL PARAMETER CON
9.4. Size:215K inchange semiconductor
2sc790.pdf
isc Silicon NPN Power Transistor 2SC790DESCRIPTIONLow Collector Saturation Voltage-: V = 1.4(V)(Max)@ I = 2ACE(sat) CDC Current Gain-: h = 40-240 @ I = 0.5AFE CComplement to Type 2SA490Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSY
9.5. Size:176K inchange semiconductor
2sc792.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC792DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 300V (Min)(BR)CEOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching and horizontal deflectionoutput applications.ABSOLU
Datasheet: 2N3192
, 2N3193
, 2N3194
, 2N3195
, 2N3196
, 2N3197
, 2N3198
, 2N3199
, BC327
, 2N320
, 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
.