2SC796 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC796
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 2 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 115 MHz
Collector Capacitance (Cc): 10 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: TO5
2SC796 Transistor Equivalent Substitute - Cross-Reference Search
2SC796 Datasheet (PDF)
2sc792.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC792 DESCRIPTION With TO-3 package High breakdown voltage APPLICATIONS For voltage regulator,inverter,switching mode power supply applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=) SYMBOL PARAMETER CON
2sc790.pdf
isc Silicon NPN Power Transistor 2SC790DESCRIPTIONLow Collector Saturation Voltage-: V = 1.4(V)(Max)@ I = 2ACE(sat) CDC Current Gain-: h = 40-240 @ I = 0.5AFE CComplement to Type 2SA490Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSY
2sc792.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC792DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 300V (Min)(BR)CEOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching and horizontal deflectionoutput applications.ABSOLU
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
