2SC822 Specs and Replacement
Type Designator: 2SC822
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 2.5 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.8 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO72
2SC822 Substitution
2SC822 detailed specifications
2sc829.pdf
Transistor 2SC829 Silicon NPN epitaxial planer type For high-frequency amplification Unit mm 5.0 0.2 4.0 0.2 Features Optimum for RF amplification, oscillation, mixing, and IF stage of FM/AM radios. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit +0.2 +0.2 0.45 0.1 0.45 0.1 Collector to base voltage VCBO 30 V 1.27 1.27 Collector to emitter voltage VCE... See More ⇒
2sc829 e.pdf
Transistor 2SC829 Silicon NPN epitaxial planer type For high-frequency amplification Unit mm 5.0 0.2 4.0 0.2 Features Optimum for RF amplification, oscillation, mixing, and IF stage of FM/AM radios. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit +0.2 +0.2 0.45 0.1 0.45 0.1 Collector to base voltage VCBO 30 V 1.27 1.27 Collector to emitter voltage VCE... See More ⇒
Detailed specifications: 2SC816 , 2SC817 , 2SC818 , 2SC819 , 2SC82 , 2SC820 , 2SC821 , 2SC821Z , 2SC2655 , 2SC822Z , 2SC823 , 2SC824 , 2SC825 , 2SC826 , 2SC827 , 2SC827T , 2SC828 .
History: HN1B01FU
Keywords - 2SC822 transistor specs
2SC822 cross reference
2SC822 equivalent finder
2SC822 lookup
2SC822 substitution
2SC822 replacement
History: HN1B01FU
LIST
Last Update
BJT: GA1A4M | SBT42 | 2SA200-Y
Popular searches
toshiba 2sc2290 | pk6d0ba mosfet | 2sd726 | c536 transistor equivalent | 2sa1294 datasheet | mp10b transistor | bc182b | 2n3054 transistor equivalent




