2SC822Z Datasheet, Equivalent, Cross Reference Search

   Type Designator: 2SC822Z
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 2.5 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 0.8 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 200 MHz
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO72

2SC822Z Transistor Equivalent Substitute - Cross-Reference Search

2SC822Z Datasheet (PDF)

9.1. Size:55K panasonic
2sc829.pdf

Transistor2SC829Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mm5.0 0.2 4.0 0.2FeaturesOptimum for RF amplification, oscillation, mixing, and IF stageof FM/AM radios.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit+0.2 +0.20.45 0.1 0.45 0.1Collector to base voltage VCBO 30 V1.27 1.27Collector to emitter voltage VCE

9.2. Size:59K panasonic
2sc829 e.pdf