2SC827 Specs and Replacement
Type Designator: 2SC827
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.7 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.3 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 10 MHz
Collector Capacitance (Cc): 20 pF
Forward Current Transfer Ratio (hFE), MIN: 370
Package: TO39
2SC827 Substitution
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2SC827 datasheet
Transistor 2SC829 Silicon NPN epitaxial planer type For high-frequency amplification Unit mm 5.0 0.2 4.0 0.2 Features Optimum for RF amplification, oscillation, mixing, and IF stage of FM/AM radios. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit +0.2 +0.2 0.45 0.1 0.45 0.1 Collector to base voltage VCBO 30 V 1.27 1.27 Collector to emitter voltage VCE... See More ⇒
Transistor 2SC829 Silicon NPN epitaxial planer type For high-frequency amplification Unit mm 5.0 0.2 4.0 0.2 Features Optimum for RF amplification, oscillation, mixing, and IF stage of FM/AM radios. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit +0.2 +0.2 0.45 0.1 0.45 0.1 Collector to base voltage VCBO 30 V 1.27 1.27 Collector to emitter voltage VCE... See More ⇒
Detailed specifications: 2SC821 , 2SC821Z , 2SC822 , 2SC822Z , 2SC823 , 2SC824 , 2SC825 , 2SC826 , 2SC5198 , 2SC827T , 2SC828 , 2SC828A , 2SC829 , 2SC829Z , 2SC83 , 2SC830 , 2SC830H .
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