2SC845 Datasheet and Replacement

   Type Designator: 2SC845
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 3.5 W
   Maximum Collector-Base Voltage |Vcb|: 55 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 0.4 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 400 MHz
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO5
      - BJT Cross-Reference Search