2SC89H Specs and Replacement
Type Designator: 2SC89H
Material of Transistor: Ge
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.12 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 20 V
Maximum Collector Current |Ic max|: 0.4 A
Max. Operating Junction Temperature (Tj): 75 °C
Electrical Characteristics
Transition Frequency (ft): 1 MHz
Collector Capacitance (Cc): 40 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO5
2SC89H Substitution
- BJT ⓘ Cross-Reference Search
2SC89H datasheet
isc Silicon NPN Power Transistor 2SC898 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 150V (Min) (BR)CEO Low Collector Saturation Voltage- V = 1.5V(Max.)@ I = 6A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER MAX U... See More ⇒
INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SC897 DESCRIPTION With TO-3 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABSOLUTE MAXIMUM RATINGS(T =25 ) ... See More ⇒
Detailed specifications: 2SC895, 2SC895-1, 2SC896, 2SC897, 2SC897A, 2SC898, 2SC898A, 2SC899, A1013, 2SC90, 2SC900, 2SC900E, 2SC901, 2SC901A, 2SC902, 2SC903, 2SC904
Keywords - 2SC89H pdf specs
2SC89H cross reference
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