2SC937 pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

2SC937 Specs and Replacement

Type Designator: 2SC937

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 22 W

Maximum Collector-Base Voltage |Vcb|: 1200 V

Maximum Collector-Emitter Voltage |Vce|: 500 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 2.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 50 MHz

Forward Current Transfer Ratio (hFE), MIN: 4

Noise Figure, dB: -

Package: TO3

2SC937 Substitution

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2SC937 datasheet

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isc Silicon NPN Power Transistor 2SC937 DESCRIPTION High Breakdown Voltage- V = 1200V(Min) CBO High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1200 V CBO V Co... See More ⇒

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