All Transistors. 2SC941TMO Datasheet

 

2SC941TMO Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SC941TMO
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.4 W
   Maximum Collector-Base Voltage |Vcb|: 35 V
   Maximum Collector-Emitter Voltage |Vce|: 35 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Transition Frequency (ft): 80 MHz
   Collector Capacitance (Cc): 3 pF
   Forward Current Transfer Ratio (hFE), MIN: 70
   Noise Figure, dB: -
   Package: TO92

 2SC941TMO Transistor Equivalent Substitute - Cross-Reference Search

   

2SC941TMO Datasheet (PDF)

 6.1. Size:249K  toshiba
2sc941tm.pdf

2SC941TMO
2SC941TMO

2SC941TM TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC941TM High Frequency Amplifier Applications Unit: mm AM High Frequency Amplifier Applications AM Frequency Converter Applications Low noise figure: NF = 3.5dB (max) (f = 1 MHz) Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 35 VCollector-emitter

 8.1. Size:229K  toshiba
2sc941.pdf

2SC941TMO
2SC941TMO

 9.1. Size:73K  nec
2sc945.pdf

2SC941TMO

 9.2. Size:244K  mcc
2sc945-y.pdf

2SC941TMO
2SC941TMO

MCC2SC945-YMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial Components2SC945-GRCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Capable of 0.4Watts of Power Dissipation. NPN Silicon Collector-current 0.15APlastic-Encapsulate Collector-base Voltage 60V Operating and storage junction temperature range: -55OC to +150OC

 9.3. Size:244K  mcc
2sc945-gr.pdf

2SC941TMO
2SC941TMO

MCC2SC945-YMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial Components2SC945-GRCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Capable of 0.4Watts of Power Dissipation. NPN Silicon Collector-current 0.15APlastic-Encapsulate Collector-base Voltage 60V Operating and storage junction temperature range: -55OC to +150OC

 9.4. Size:194K  utc
2sc945.pdf

2SC941TMO
2SC941TMO

UNISONIC TECHNOLOGIES CO., LTD 2SC945 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR DESCRIPTION The UTC 2SC945 is an audio frequency amplifier high frequency OSC NPN transistor. FEATURES * Collector-Emitter voltage: BVCBO=50V * Collector current up to 150mA * High hFE linearity * Complimentary to UTC 2SA733 ORDERING I

 9.5. Size:43K  no
2sc947.pdf

2SC941TMO

 9.6. Size:46K  no
2sc943.pdf

2SC941TMO

 9.7. Size:42K  no
2sc940.pdf

2SC941TMO

 9.8. Size:226K  no
2sc945.pdf

2SC941TMO
2SC941TMO

ST 2SC945 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into five groups, R, O, Y, P and L, according to its DC current gain. As complementary type the PNP transistor ST 2SA733 is recommended. On special request, these transistors can be 1. Emitter 2. Collector 3. Base manufactured in different pin configurati

 9.9. Size:151K  jmnic
2sc940.pdf

2SC941TMO
2SC941TMO

JMnic Product Specification Silicon NPN Power Transistors 2SC940 DESCRIPTION With TO-3 package High current capability Wide area of safe operation APPLICATIONS For B/W TV horizontal deflection application PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=25) SYMBOL PARAMETE

 9.10. Size:272K  shenzhen
2sc945.pdf

2SC941TMO
2SC941TMO

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC945 TRANSISTOR (NPN) FEATURE 1. BASE Excellent hFE Linearity2. EMITTER Low noise 3. COLLECTOR Complementary to A733 MARKING:CR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 VVCEO Collector-Emi

 9.11. Size:1959K  blue-rocket-elect
2sc945.pdf

2SC941TMO
2SC941TMO

2SC945 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features ,h FE High voltage, excellent hFE linearity. / Applications AF amplifier and low speed switching applications. / Eq

 9.12. Size:1532K  blue-rocket-elect
2sc945m.pdf

2SC941TMO
2SC941TMO

2SC945M Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features ,High voltage, excellent hFE linearity. / Applications General power amplifier application and low speed switching.

 9.13. Size:145K  semtech
2sc945r 2sc945o 2sc945y 2sc945p 2sc945l.pdf

2SC941TMO
2SC941TMO

2SC945 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into five groups, R, O, Y, P and L, according to its DC current gain. As complementary type the PNP transistor 2SA733 is recommended. On special request, these transistors can be 1. Emitter 2. Collector 3. Base manufactured in different pin configurations. T

 9.14. Size:634K  china
2sc945lt1.pdf

2SC941TMO
2SC941TMO

SEMICONDUCTOR 2SC945LT1 Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR Package:SOT-23 * Collector Current: Ic= 150mA * Collector-Emitter Voltage:Vce= 50V * High Total Power Dissipation:Pc=225mW * High Hfe And Good Linearity ABSOLUTE MAXIMUM RATINGS at Ta=25 Characteristic Symbol Rating UnitCollector-Base Voltage Vcbo 60 V

 9.15. Size:781K  kexin
2sc945.pdf

2SC941TMO
2SC941TMO

SMD TypeSMD Type si o orsSMD Type TranDistdesNPN Transistors2SC945SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector current up to 150mA High hFE linearity1 2 Complementary to 2SA733+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector

 9.16. Size:260K  galaxy
2sc945.pdf

2SC941TMO
2SC941TMO

Product specification Silicon Epitaxial Planar Transistor 2SC945 FEATURES Pb High voltage and high current. Lead-free Excellent h linearity. FE Low noise. APPLICATIONS Audio frequency amplifier. SOT-23 ORDERING INFORMATION Type No. Marking Package Code 2SC945 CR SOT-23 : none is for Lead Free package; G is for Halogen Free package

 9.17. Size:191K  inchange semiconductor
2sc940.pdf

2SC941TMO
2SC941TMO

isc Silicon NPN Power Transistor 2SC940DESCRIPTIONHigh Breakdown Voltage-: V = 90V(Min)CEOWide Safe Operating AreaMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for B/W TV horizontal deflection output applications.Suitable for horizontal output applications in 12~24 inch B/WTV, and switching applications of 5

 9.18. Size:189K  inchange semiconductor
2sc945.pdf

2SC941TMO
2SC941TMO

isc Silicon NPN Transistor 2SC945DESCRIPTIONHigh VoltageExcellent h linearityFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDsigned for use in driver stage of AF amplifierand low speed switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 60 VCBOV Collector-Emitter Vol

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , C3198 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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