2SC980AG Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC980AG
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 90 V
Maximum Collector-Emitter Voltage |Vce|: 70 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 125 °C
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO92
2SC980AG Transistor Equivalent Substitute - Cross-Reference Search
2SC980AG Datasheet (PDF)
2sc983.pdf
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2sc982tm.pdf
2SC982TM TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Darlington) 2SC982TM Printer Drive, Core Drive and LED Drive Applications Unit: mm Low Frequency Amplifier Applications High DC current gain: hFE (1) = 5000 (min) (I = 10 mA) C: h = 10000 (min) (I = 100 mA) FE (2) CEquivalent Circuit Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rat
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
