2SD1001 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SD1001
SMD Transistor Code: EK_EL_EM
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 2 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 70 MHz
Collector Capacitance (Cc): 7 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: SOT89
2SD1001 Transistor Equivalent Substitute - Cross-Reference Search
2SD1001 Datasheet (PDF)
2sd1001.pdf
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SMD Type TransistorsNPN Transistors2SD1001 Features 1.70 0.1 High collector saturation voltage. VCE(sat) > 80V Complimentary to 2SB8000.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 80 Collector - Emitter Voltage VCEO 80 V Emitter - Base Voltage VEBO 5 Collect
2sd1005.pdf
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2SD1005 1A , 100V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-89 FEATURES Small Flat Package 4 High Breakdown Voltage Excellent DC Current Gain Linearity 123B C AE ECCLASSIFICATION OF hFE(1) Product-Rank 2SD1005-W 2SD1005-V 2SD1005-U B DRange 90~180 1
2sd1005.pdf
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SD1005 TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR Small Flat Package High Breakdown Voltage 3. EMITTER Excellent DC Current Gain Linearity MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 100 V VCEO C
2sd1005.pdf
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2SD1005 TRANSISTOR (NPN) SOT-89-3L FEATURES Small Flat Package1. BASE High Breakdown Voltage Excellent DC Current Gain Linearity 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current 1 A PC Coll
2sd1007.pdf
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SMD Type TransistorsNPN Transistors2SD10071.70 0.1FeaturesHigh collector to emitter voltage: VCEO 120V.0.42 0.10.46 0.11.Base2.Collector3.EmitterAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO 120 VCollector-emitter voltage VCEO 120 VEmitter-base voltage VEBO 5 VCollector current IC 0.7 ACollector current (pulse) * IC (pu
2sd1005.pdf
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SMD Type TransistorsNPN Transistors2SD10051.70 0.1FeaturesWorld standard miniature package: SOT-89.High collector to base voltage: VCBO 100V.0.42 0.10.46 0.1Excellent dc current gain linearity: hFE=80TYP. (VCE=2V, IC=500mA).1.Base2.Collector3.EmitterAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO 100 VCollector-emitter vo
2sd1006.pdf
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SMD Type TransistorsSMD TypeNPN Transistors2SD10061.70 0.1FeaturesHigh collector to emitter voltage: VCEO 100V.0.42 0.10.46 0.11.Base2.Collector3.EmitterAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO 100 VCollector-emitter voltage VCEO 100 VEmitter-base voltage VEBO 5 VCollector current IC 0.7 ACollector current (pulse
2sd1000.pdf
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SMD Type TransistorsNPN Transistors2SD1000 Features1.70 0.1 Low collector saturation voltage. VCE(sat)
2sd1000l 2sd1000k.pdf
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2SD1000NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage VCBO 40 VCollector Emitter Voltage VCEO 25 VEmitter Base Voltage VEBO 6 VCollector Current IC 0.8 APower Dissipation Ptot 625
2sd1005bw 2sd1005bv 2sd1005bu.pdf
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2SD1005NPN Medium Power TransistorsFeaturesHigh current (max. 1 A).Low voltage (max. 80 V).Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-basevoltage CBO 100 VVCEOCollector-emittervoltageV80 VEmitter-base voltage VEBO 5VCollector current IC 1APeak collector current ICM 1.5 APeak base current IBM 0.2 ATotal power dissipation Ptot 1.3 WStor
2sd1007.pdf
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2SD1007NPN Silicon Epitaxial TransistorFEATURESHigh collector to emitter voltage: VCEO 120V.SOT-89MECHANICAL DATA Case: SOT-89 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0 Weight: 0.055 grams (approximate)MAXIMUM RATINGS (T = 25C unless otherwise noted)AParameter Symbol Rating UnitCollector-base voltage V 120 VCBOCo
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
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![2SD1001](https://alltransistors.com/images/ru.png)
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