2SD1005BU Specs and Replacement
Type Designator: 2SD1005BU
SMD Transistor Code: BU
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 2 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 80 MHz
Collector Capacitance (Cc): 12 pF
Forward Current Transfer Ratio (hFE), MIN: 200
Package: SOT89
2SD1005BU Substitution
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2SD1005BU datasheet
2sd1005bw 2sd1005bv 2sd1005bu.pdf 
2SD1005 NPN Medium Power Transistors Features High current (max. 1 A). Low voltage (max. 80 V). Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-basevoltage CBO 100 V V CEO Collector-emittervoltageV 80 V Emitter-base voltage VEBO 5V Collector current IC 1A Peak collector current ICM 1.5 A Peak base current IBM 0.2 A Total power dissipation Ptot 1.3 W Stor... See More ⇒
2SD1005 1A , 100V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-89 FEATURES Small Flat Package 4 High Breakdown Voltage Excellent DC Current Gain Linearity 1 2 3 B C A E E C CLASSIFICATION OF hFE(1) Product-Rank 2SD1005-W 2SD1005-V 2SD1005-U B D Range 90 180 1... See More ⇒
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SD1005 TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR Small Flat Package High Breakdown Voltage 3. EMITTER Excellent DC Current Gain Linearity MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 100 V VCEO C... See More ⇒
Detailed specifications: 2SD1001, 2SD1001FK, 2SD1001FL, 2SD1001FM, 2SD1002, 2SD1003, 2SD1004, 2SD1005, BC327, 2SD1005BV, 2SD1005BW, 2SD1006, 2SD1006HK, 2SD1006HL, 2SD1006HM, 2SD1007, 2SD1007HO
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