2SD1006HK Specs and Replacement
Type Designator: 2SD1006HK
SMD Transistor Code: HK
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 2 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.7 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 45 MHz
Collector Capacitance (Cc): 12 pF
Forward Current Transfer Ratio (hFE), MIN: 200
Noise Figure, dB: -
Package: SOT89
- BJT ⓘ Cross-Reference Search
2SD1006HK datasheet
7.2. Size:989K kexin
2sd1006.pdf 
SMD Type Transistors SMD Type NPN Transistors 2SD1006 1.70 0.1 Features High collector to emitter voltage VCEO 100V. 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 100 V Collector-emitter voltage VCEO 100 V Emitter-base voltage VEBO 5 V Collector current IC 0.7 A Collector current (pulse... See More ⇒
8.5. Size:72K secos
2sd1005.pdf
2SD1005 1A , 100V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-89 FEATURES Small Flat Package 4 High Breakdown Voltage Excellent DC Current Gain Linearity 1 2 3 B C A E E C CLASSIFICATION OF hFE(1) Product-Rank 2SD1005-W 2SD1005-V 2SD1005-U B D Range 90 180 1... See More ⇒
8.6. Size:178K jiangsu
2sd1005.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SD1005 TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR Small Flat Package High Breakdown Voltage 3. EMITTER Excellent DC Current Gain Linearity MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 100 V VCEO C... See More ⇒
8.7. Size:337K htsemi
2sd1005.pdf
2SD1005 TRANSISTOR (NPN) SOT-89-3L FEATURES Small Flat Package 1. BASE High Breakdown Voltage Excellent DC Current Gain Linearity 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current 1 A PC Coll... See More ⇒
8.8. Size:357K kexin
2sd1007.pdf
SMD Type Transistors NPN Transistors 2SD1007 1.70 0.1 Features High collector to emitter voltage VCEO 120V. 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 120 V Collector-emitter voltage VCEO 120 V Emitter-base voltage VEBO 5 V Collector current IC 0.7 A Collector current (pulse) * IC (pu... See More ⇒
8.9. Size:1048K kexin
2sd1005.pdf
SMD Type Transistors NPN Tr ansistors 2SD1005 1.70 0.1 Features World standard miniature package SOT-89. High collector to base voltage VCBO 100V. 0.42 0.1 0.46 0.1 Excellent dc current gain linearity hFE=80TYP. (VCE=2V, IC=500mA). 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 100 V Collector-emitter vo... See More ⇒
8.10. Size:1152K kexin
2sd1000.pdf
SMD Type Transistors NPN Transistors 2SD1000 Features 1.70 0.1 Low collector saturation voltage. VCE(sat) ... See More ⇒
8.11. Size:1117K kexin
2sd1001.pdf
SMD Type Transistors NPN Transistors 2SD1001 Features 1.70 0.1 High collector saturation voltage. VCE(sat) > 80V Complimentary to 2SB800 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 80 Collector - Emitter Voltage VCEO 80 V Emitter - Base Voltage VEBO 5 Collect... See More ⇒
8.13. Size:282K cn shikues
2sd1000l 2sd1000k.pdf
2SD1000 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage VCBO 40 V Collector Emitter Voltage VCEO 25 V Emitter Base Voltage VEBO 6 V Collector Current IC 0.8 A Power Dissipation Ptot 625 ... See More ⇒
8.14. Size:632K cn shikues
2sd1005bw 2sd1005bv 2sd1005bu.pdf
2SD1005 NPN Medium Power Transistors Features High current (max. 1 A). Low voltage (max. 80 V). Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-basevoltage CBO 100 V V CEO Collector-emittervoltageV 80 V Emitter-base voltage VEBO 5V Collector current IC 1A Peak collector current ICM 1.5 A Peak base current IBM 0.2 A Total power dissipation Ptot 1.3 W Stor... See More ⇒
8.15. Size:1001K cn hottech
2sd1007.pdf
2SD1007 NPN Silicon Epitaxial Transistor FEATURES High collector to emitter voltage VCEO 120V. SOT-89 MECHANICAL DATA Case SOT-89 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Weight 0.055 grams (approximate) MAXIMUM RATINGS (T = 25 C unless otherwise noted) A Parameter Symbol Rating Unit Collector-base voltage V 120 V CBO Co... See More ⇒
Detailed specifications: 2SD1002, 2SD1003, 2SD1004, 2SD1005, 2SD1005BU, 2SD1005BV, 2SD1005BW, 2SD1006, MJE340, 2SD1006HL, 2SD1006HM, 2SD1007, 2SD1007HO, 2SD1007HP, 2SD1007HR, 2SD1009, 2SD100A
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