2SD1007HO Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SD1007HO
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 2 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.7 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 45 MHz
Collector Capacitance (Cc): 12 pF
Forward Current Transfer Ratio (hFE), MIN: 135
Noise Figure, dB: -
Package: SOT89
2SD1007HO Transistor Equivalent Substitute - Cross-Reference Search
2SD1007HO Datasheet (PDF)
2sd1007.pdf
SMD Type TransistorsNPN Transistors2SD10071.70 0.1FeaturesHigh collector to emitter voltage: VCEO 120V.0.42 0.10.46 0.11.Base2.Collector3.EmitterAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO 120 VCollector-emitter voltage VCEO 120 VEmitter-base voltage VEBO 5 VCollector current IC 0.7 ACollector current (pulse) * IC (pu
2sd1007.pdf
2SD1007NPN Silicon Epitaxial TransistorFEATURESHigh collector to emitter voltage: VCEO 120V.SOT-89MECHANICAL DATA Case: SOT-89 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0 Weight: 0.055 grams (approximate)MAXIMUM RATINGS (T = 25C unless otherwise noted)AParameter Symbol Rating UnitCollector-base voltage V 120 VCBOCo
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
