2SD1010 PDF and Equivalents Search

 ..1. Size:42K  panasonic

 2sd1010 e.pdf

Transistor 2SD1010 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm 5.0 0.2 4.0 0.2 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. Low noise voltage NV. Absolute Maximum Ratings (Ta=25 C) +0.2 +0.2 0.45 0.1 0.45 0.1 Parameter Symbol Ratings Unit 1.27 1.2... See More ⇒

 ..2. Size:38K  panasonic

 2sd1010.pdf

Transistor 2SD1010 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm 5.0 0.2 4.0 0.2 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. Low noise voltage NV. Absolute Maximum Ratings (Ta=25 C) +0.2 +0.2 0.45 0.1 0.45 0.1 Parameter Symbol Ratings Unit 1.27 1.2... See More ⇒

 8.1. Size:57K  sanyo

 2sd1012.pdf

Ordering number ENN676D PNP/NPN Epitaxial Planar Silicon Transistors 2SB808/2SD1012 Low-Voltage Large-Current Amplifier Applications Package Dimensions unit mm 2033A [2SB808/2SD1012] 2.2 4.0 0.4 0.5 0.4 0.4 1 2 3 1.3 1.3 1 Emitter 2 Collector ( ) 2SB808 3 Base 3.0 3.8 SANYO SPA Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Conditions R... See More ⇒

 8.2. Size:42K  panasonic

 2sd1011 e.pdf

Transistor 2SD1011 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm 5.0 0.2 4.0 0.2 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit +0.2 +0.2 0.45 0.1 0.45 0.1 Collector to base voltage VCBO 1... See More ⇒

 8.3. Size:42K  panasonic

 2sd1011.pdf

Transistor 2SD1011 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm 5.0 0.2 4.0 0.2 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit +0.2 +0.2 0.45 0.1 0.45 0.1 Collector to base voltage VCBO 1... See More ⇒

 8.4. Size:39K  sony

 2sd1015.pdf

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 8.5. Size:182K  inchange semiconductor

 2sd1016.pdf

isc Product Specification isc Silicon NPN Power Transistor 2SD1016 DESCRIPTION High Collector-Base Voltage- V = 1500V(Min) CBO High Current Capability 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in large screen color deflection circuits . ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB... See More ⇒