2SD1012F PDF and Equivalents Search

 

2SD1012F Specs and Replacement

Type Designator: 2SD1012F

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.25 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 15 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.7 A

Max. Operating Junction Temperature (Tj): 125 °C

Electrical Characteristics

Transition Frequency (ft): 250 MHz

Collector Capacitance (Cc): 8 pF

Forward Current Transfer Ratio (hFE), MIN: 160

Noise Figure, dB: -

Package: SPA

 2SD1012F Substitution

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2SD1012F datasheet

 7.1. Size:57K  sanyo

2sd1012.pdf pdf_icon

2SD1012F

Ordering number ENN676D PNP/NPN Epitaxial Planar Silicon Transistors 2SB808/2SD1012 Low-Voltage Large-Current Amplifier Applications Package Dimensions unit mm 2033A [2SB808/2SD1012] 2.2 4.0 0.4 0.5 0.4 0.4 1 2 3 1.3 1.3 1 Emitter 2 Collector ( ) 2SB808 3 Base 3.0 3.8 SANYO SPA Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Conditions R... See More ⇒

 8.1. Size:42K  panasonic

2sd1011 e.pdf pdf_icon

2SD1012F

Transistor 2SD1011 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm 5.0 0.2 4.0 0.2 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit +0.2 +0.2 0.45 0.1 0.45 0.1 Collector to base voltage VCBO 1... See More ⇒

 8.2. Size:42K  panasonic

2sd1011.pdf pdf_icon

2SD1012F

Transistor 2SD1011 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm 5.0 0.2 4.0 0.2 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit +0.2 +0.2 0.45 0.1 0.45 0.1 Collector to base voltage VCBO 1... See More ⇒

 8.3. Size:42K  panasonic

2sd1010 e.pdf pdf_icon

2SD1012F

Transistor 2SD1010 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm 5.0 0.2 4.0 0.2 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. Low noise voltage NV. Absolute Maximum Ratings (Ta=25 C) +0.2 +0.2 0.45 0.1 0.45 0.1 Parameter Symbol Ratings Unit 1.27 1.2... See More ⇒

Detailed specifications: 2SD1007HP, 2SD1007HR, 2SD1009, 2SD100A, 2SD101, 2SD1010, 2SD1011, 2SD1012, 2SD313, 2SD1012G, 2SD1012H, 2SD1014, 2SD1015, 2SD1016, 2SD1017, 2SD1018, 2SD102

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