2SD1012F Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SD1012F
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.25 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.7 A
Max. Operating Junction Temperature (Tj): 125 °C
Transition Frequency (ft): 250 MHz
Collector Capacitance (Cc): 8 pF
Forward Current Transfer Ratio (hFE), MIN: 160
Noise Figure, dB: -
Package: SPA
2SD1012F Transistor Equivalent Substitute - Cross-Reference Search
2SD1012F Datasheet (PDF)
2sd1012.pdf
Ordering number:ENN676DPNP/NPN Epitaxial Planar Silicon Transistors2SB808/2SD1012Low-Voltage Large-CurrentAmplifier ApplicationsPackage Dimensionsunit:mm2033A[2SB808/2SD1012]2.24.00.40.50.40.41 2 31.3 1.31 : Emitter2 : Collector( ) : 2SB8083 : Base3.03.8 SANYO : SPASpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol Conditions R
2sd1011 e.pdf
Transistor2SD1011Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mm5.0 0.2 4.0 0.2FeaturesHigh foward current transfer ratio hFE.Low collector to emitter saturation voltage VCE(sat).High emitter to base voltage VEBO.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit +0.2 +0.20.45 0.1 0.45 0.1Collector to base voltage VCBO 1
2sd1011.pdf
Transistor2SD1011Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mm5.0 0.2 4.0 0.2FeaturesHigh foward current transfer ratio hFE.Low collector to emitter saturation voltage VCE(sat).High emitter to base voltage VEBO.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit +0.2 +0.20.45 0.1 0.45 0.1Collector to base voltage VCBO 1
2sd1010 e.pdf
Transistor2SD1010Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mm5.0 0.2 4.0 0.2FeaturesHigh foward current transfer ratio hFE.Low collector to emitter saturation voltage VCE(sat).High emitter to base voltage VEBO.Low noise voltage NV.Absolute Maximum Ratings (Ta=25C)+0.2 +0.20.45 0.1 0.45 0.1Parameter Symbol Ratings Unit1.27 1.2
2sd1010.pdf
Transistor2SD1010Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mm5.0 0.2 4.0 0.2FeaturesHigh foward current transfer ratio hFE.Low collector to emitter saturation voltage VCE(sat).High emitter to base voltage VEBO.Low noise voltage NV.Absolute Maximum Ratings (Ta=25C)+0.2 +0.20.45 0.1 0.45 0.1Parameter Symbol Ratings Unit1.27 1.2
2sd1016.pdf
isc Product Specificationisc Silicon NPN Power Transistor 2SD1016DESCRIPTIONHigh Collector-Base Voltage-: V = 1500V(Min)CBOHigh Current Capability100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSDesigned for use in large screen color deflection circuits .ABSOLUTE MAXIMUM RATINGS(T =25)aSYMB
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
