All Transistors. 2SD1012G Datasheet

 

2SD1012G Datasheet and Replacement


   Type Designator: 2SD1012G
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.25 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 15 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.7 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Transition Frequency (ft): 250 MHz
   Collector Capacitance (Cc): 8 pF
   Forward Current Transfer Ratio (hFE), MIN: 280
   Noise Figure, dB: -
   Package: SPA
 

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2SD1012G Datasheet (PDF)

 7.1. Size:57K  sanyo
 2sd1012.pdf pdf_icon

2SD1012G

Ordering number:ENN676DPNP/NPN Epitaxial Planar Silicon Transistors2SB808/2SD1012Low-Voltage Large-CurrentAmplifier ApplicationsPackage Dimensionsunit:mm2033A[2SB808/2SD1012]2.24.00.40.50.40.41 2 31.3 1.31 : Emitter2 : Collector( ) : 2SB8083 : Base3.03.8 SANYO : SPASpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol Conditions R

 8.1. Size:42K  panasonic
 2sd1011 e.pdf pdf_icon

2SD1012G

Transistor2SD1011Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mm5.0 0.2 4.0 0.2FeaturesHigh foward current transfer ratio hFE.Low collector to emitter saturation voltage VCE(sat).High emitter to base voltage VEBO.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit +0.2 +0.20.45 0.1 0.45 0.1Collector to base voltage VCBO 1

 8.2. Size:42K  panasonic
 2sd1011.pdf pdf_icon

2SD1012G

Transistor2SD1011Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mm5.0 0.2 4.0 0.2FeaturesHigh foward current transfer ratio hFE.Low collector to emitter saturation voltage VCE(sat).High emitter to base voltage VEBO.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit +0.2 +0.20.45 0.1 0.45 0.1Collector to base voltage VCBO 1

 8.3. Size:42K  panasonic
 2sd1010 e.pdf pdf_icon

2SD1012G

Transistor2SD1010Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mm5.0 0.2 4.0 0.2FeaturesHigh foward current transfer ratio hFE.Low collector to emitter saturation voltage VCE(sat).High emitter to base voltage VEBO.Low noise voltage NV.Absolute Maximum Ratings (Ta=25C)+0.2 +0.20.45 0.1 0.45 0.1Parameter Symbol Ratings Unit1.27 1.2

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Datasheet: 2SD1007HR , 2SD1009 , 2SD100A , 2SD101 , 2SD1010 , 2SD1011 , 2SD1012 , 2SD1012F , TIP42 , 2SD1012H , 2SD1014 , 2SD1015 , 2SD1016 , 2SD1017 , 2SD1018 , 2SD102 , 2SD1020 .

History: 2N2692 | BSV29K | H13003AH | KTC601UY | CIL242 | BC460-4 | MUN2211LT1

Keywords - 2SD1012G transistor datasheet

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