All Transistors. 2SD1032B Datasheet

 

2SD1032B Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SD1032B

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 60 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 4 A

Max. Operating Junction Temperature (Tj): 150 °C

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TOP3

2SD1032B Transistor Equivalent Substitute - Cross-Reference Search

 

2SD1032B Datasheet (PDF)

3.1. 2sd1032.pdf Size:134K _inchange_semiconductor

2SD1032B
2SD1032B

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1032 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Large Collector Power Dissipation ·Complement to Type 2SB812 APPLICATIONS ·Designed for AF power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60

4.1. 2sd1033.pdf Size:201K _nec

2SD1032B
2SD1032B

4.2. 2sd1030.pdf Size:37K _panasonic

2SD1032B
2SD1032B

Transistor 2SD1030 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm +0.2 2.8 0.3 +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). 1 High emitter to base voltage VEBO. 3 Low noise voltage NV. Mini type package, allowing downsizing of the equipment and 2 automatic

 4.3. 2sd1030 e.pdf Size:37K _panasonic

2SD1032B
2SD1032B

Transistor 2SD1030 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm +0.2 2.8 0.3 +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). 1 High emitter to base voltage VEBO. 3 Low noise voltage NV. Mini type package, allowing downsizing of the equipment and 2 automatic

4.4. 2sd1037.pdf Size:128K _inchange_semiconductor

2SD1032B
2SD1032B

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1037 DESCRIPTION Ў¤ With MT-200 package Ў¤ Excellent safe operating area Ў¤ High current capability APPLICATIONS Ў¤ For electrical supply ,DC-DC converters and low frequency power amplifier applications PINNING(see Fig.2) PIN 1 2 3 Base Collector;connected to mounting base DESCRIPTION Ў¤ Abso

 4.5. 2sd103.pdf Size:318K _inchange_semiconductor

2SD1032B
2SD1032B

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2SD103 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·High Power Dissipation- : PC= 25W(Max)@TC=25? Complement to Type 2SB503 APPLICATIONS ·Designed for audio power amplifier, power switching, DC-DC converter and regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25

4.6. 2sd1030.pdf Size:567K _kexin

2SD1032B
2SD1032B

SMD Type Transistors NPN Transistors 2SD1030 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 ■ Features ● Collector Current Capability IC=50mA 1 2 ● Collector Emitter Voltage VCEO=40V +0.1 +0.05 0.95-0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collect

4.7. 2sd1033.pdf Size:1032K _kexin

2SD1032B
2SD1032B

SMD Type Transistors NPN Transistors 2SD1033 TO-252 Unit: mm +0.15 6.50-0.15 +0.1 ■ Features 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 ● High voltageVCEO=150V. ● Complimentary to 2SB768 0.127 +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4.60 -0.15 2 Collector 3 Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Vo

Datasheet: 2N3181 , 2N3182 , 2N3183 , 2N3184 , 2N3185 , 2N3186 , 2N3187 , 2N3188 , BC547B , 2N319 , 2N3190 , 2N3191 , 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 .

 
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