All Transistors. 2SD1032B Datasheet

 

2SD1032B Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SD1032B

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 60 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 4 A

Max. Operating Junction Temperature (Tj): 150 °C

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TOP3

2SD1032B Transistor Equivalent Substitute - Cross-Reference Search

 

2SD1032B Datasheet (PDF)

3.1. 2sd1032.pdf Size:217K _inchange_semiconductor

2SD1032B
2SD1032B

isc Silicon NPN Power Transistor 2SD1032 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V = 60V(Min) (BR)CEO ·Large Collector Power Dissipation ·Complement to Type 2SB812 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for AF power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE

4.1. 2sd1033.pdf Size:201K _nec

2SD1032B
2SD1032B

4.2. 2sd1030 e.pdf Size:37K _panasonic

2SD1032B
2SD1032B

Transistor 2SD1030 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm +0.2 2.8 0.3 +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). 1 High emitter to base voltage VEBO. 3 Low noise voltage NV. Mini type package, allowing downsizing of the equipment and 2 automatic

 4.3. 2sd1030.pdf Size:37K _panasonic

2SD1032B
2SD1032B

Transistor 2SD1030 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm +0.2 2.8 0.3 +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). 1 High emitter to base voltage VEBO. 3 Low noise voltage NV. Mini type package, allowing downsizing of the equipment and 2 automatic

4.4. 2sd103.pdf Size:211K _inchange_semiconductor

2SD1032B
2SD1032B

isc Silicon NPN Power Transistors 2SD103 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V = 50V(Min) (BR)CEO ·High Power Dissipation- : P = 25W(Max)@T =25℃ C C ·Complement to Type 2SB503 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio power amplifier, power switching, DC-DC converter and regulator appl

 4.5. 2sd1038.pdf Size:198K _inchange_semiconductor

2SD1032B
2SD1032B

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1038 DESCRIPTION ·High Current Capability ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching and linear applications in military and industrial equipment. ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAME

4.6. 2sd1037.pdf Size:213K _inchange_semiconductor

2SD1032B
2SD1032B

isc Silicon NPN Power Transistor 2SD1037 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- V = 150V(Min) (BR)CEO ·Good Linearity of h FE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Volt

4.7. 2sd1031.pdf Size:187K _inchange_semiconductor

2SD1032B
2SD1032B

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1031 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V = 120V(Min) (BR)CEO ·Low Collector-Emitter Saturation Voltage- : V = 2.0V(Max)@ I = 4A CE(sat) C ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier app

4.8. 2sd1033.pdf Size:1032K _kexin

2SD1032B
2SD1032B

SMD Type Transistors NPN Transistors 2SD1033 TO-252 Unit: mm +0.15 6.50-0.15 +0.1 ■ Features 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 ● High voltageVCEO=150V. ● Complimentary to 2SB768 0.127 +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4.60 -0.15 2 Collector 3 Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Vo

4.9. 2sd1030.pdf Size:567K _kexin

2SD1032B
2SD1032B

SMD Type Transistors NPN Transistors 2SD1030 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 ■ Features ● Collector Current Capability IC=50mA 1 2 ● Collector Emitter Voltage VCEO=40V +0.1 +0.05 0.95-0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collect

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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