All Transistors. 2N2217-51 Datasheet

 

2N2217-51 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2N2217-51

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.8 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.8 A

Max. Operating Junction Temperature (Tj): 175 °C

Transition Frequency (ft): 250 MHz

Collector Capacitance (Cc): 8 pF

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO51

2N2217-51 Transistor Equivalent Substitute - Cross-Reference Search

 

2N2217-51 Datasheet (PDF)

 9.1. Size:55K  philips
2n2219 2n2219a 3.pdf

2N2217-51
2N2217-51

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D1112N2219; 2N2219ANPN switching transistors1997 Sep 03Product specificationSupersedes data of 1997 May 07File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN switching transistors 2N2219; 2N2219AFEATURES PINNING High current (max. 800 mA)PIN DESCRIPTION Low voltage (max. 40

 9.2. Size:168K  st
2n2222a 2n2219a.pdf

2N2217-51
2N2217-51

2N2219A2N2222AHIGH SPEED SWITCHESPRELIMINARY DATADESCRIPTION The 2N2219A and 2N2222A are silicon PlanarEpitaxial NPN transistors in Jedec TO-39 (for2N2219A) and in Jedec TO-18 (for 2N2222A)metal case. They are designed for high speedswitching application at collector current up to500mA, and feature useful current gain over awide range of collector current, low leakage

 9.3. Size:71K  st
2n2218-2n2219-2n2221-2n2222.pdf

2N2217-51
2N2217-51

2N2218-2N22192N2221-2N2222HIGH-SPEED SWITCHESDESCRIPTIONThe 2N2218, 2N2219, 2N2221 and 2N2222 are sili-con planar epitaxial NPN transistors in JedecTO-39 (for 2N2218 and 2N2219) and in JedecTO-18 (for 2N2221 and 2N2222) metal cases. Theyare designed for high-speed switching applicationsat collector currents up to 500 mA, and feature use-ful current gain over a wide range of

 9.4. Size:166K  st
2n2219a 2n2222a.pdf

2N2217-51
2N2217-51

2N2219A2N2222AHIGH SPEED SWITCHESPRELIMINARY DATADESCRIPTION The 2N2219A and 2N2222A are silicon PlanarEpitaxial NPN transistors in Jedec TO-39 (for2N2219A) and in Jedec TO-18 (for 2N2222A)metal case. They are designed for high speedswitching application at collector current up to500mA, and feature useful current gain over awide range of collector current, low leakage

 9.5. Size:56K  central
2n2218-a 2n2219-a.pdf

2N2217-51

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

 9.6. Size:327K  mcc
2n2219a to-39.pdf

2N2217-51
2N2217-51

MCCTMMicro Commercial ComponentsMicro Commercial Components 20736 Marilla Street Chatsworth 2N2219ACA 91311Phone: (818) 701-4933Fax: (818) 701-4939SWITCHINGFeaturesFeaturesTRANSISTOR Collector - Base Voltage 75 V Collector - Current 800 mA Medium Current, Bipolar TransistorSMALL SIGNAL Marking: Type number BIPOLAR Lead Free Finish/RoHS Complian

 9.7. Size:11K  semelab
2n2218ax.pdf

2N2217-51

2N2218AXDimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar NPN Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 40V dia.IC = 0.8A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100)

 9.8. Size:10K  semelab
2n2218x.pdf

2N2217-51

2N2218XDimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar NPN Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 30V dia.IC = 0.8A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1

 9.9. Size:208K  cdil
2n2218a 19a.pdf

2N2217-51
2N2217-51

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR SWITCHING TRANSISTORS 2N2218A2N2219ATO-39Switching And Linear Application DC And VHF Amplifier ApplicationsABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL 2N2218A,19A UNITCollector -Emitter Voltage VCEO 40 VCollector -Base Voltage VCBO 75 VEmitter -Base Voltage VEBO 6.0 V

 9.10. Size:58K  microsemi
2n2218 2n2219.pdf

2N2217-51
2N2217-51

TECHNICAL DATA NPN SWITCHING SILICON TRANSISTOR Qualified per MIL-PRF-19500/251 Devices Qualified Level JAN 2N2218 2N2219 JANTX 2N2218A 2N2219A JANTXV 2N2218AL 2N2219AL JANS MAXIMUM RATINGS 2N2218 2N2218A; L Ratings Symbol Unit 2N2219 2N2219A; L Collector-Emitter Voltage 30 50 Vdc VCEO Collector-Base Voltage 60 75 Vdc VCBO TO- 39* (TO-205AD) Emitter-B

 9.11. Size:161K  microsemi
2n2218al.pdf

2N2217-51
2N2217-51

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: http://www.microsemi.com NPN-SWITCHING SILICON TRANSISTOR Qualified per MIL-PRF-19500/251 DEVICES LEVELS 2N2218 2N2219 JAN2N2218A 2N2219A JANTX2N2218AL 2N2219AL

 9.12. Size:161K  microsemi
2n2218 2n2218a 2n2218al 2n2219 2n2219a 2n2219al.pdf

2N2217-51
2N2217-51

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: http://www.microsemi.com NPN-SWITCHING SILICON TRANSISTOR Qualified per MIL-PRF-19500/251 DEVICES LEVELS 2N2218 2N2219 JAN2N2218A 2N2219A JANTX2N2218AL 2N2219AL

Datasheet: 2N2208 , 2N2209 , 2N2210 , 2N2211 , 2N2212 , 2N2214 , 2N2216 , 2N2217 , 2SC2625 , 2N2217A , 2N2218 , 2N2218A , 2N2218AQF , 2N2218AS , 2N2218S , 2N2219 , 2N2219A .

 

 
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