All Transistors. 2SD1052A Datasheet

 

2SD1052A Datasheet and Replacement


   Type Designator: 2SD1052A
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 5 MHz
   Collector Capacitance (Cc): 70 pF
   Forward Current Transfer Ratio (hFE), MIN: 400
   Noise Figure, dB: -
   Package: TO220
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2SD1052A Datasheet (PDF)

 ..1. Size:113K  toshiba
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2SD1052A

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 8.1. Size:505K  1
 2sd1766 2sd1758 2sd1862 2sd1189f 2sd1055 2sd1919 2sd1227m.pdf pdf_icon

2SD1052A

 8.2. Size:124K  rohm
 2sd1055 2sd1766.pdf pdf_icon

2SD1052A

TransistorsMedium Power Transistor (32V, 2A)2SD1766 / 2SD1758 / 2SD1862 / 2SD1055 /2SD1919 / 2SD1227MFFeatures FExternal dimensions (Units: mm)1) Low VCE(sat).VCE(sat) = 0.5V (Typ.)(IC / IB = 2A / 0.2A)2) Complements the2SB1188 / 2SB1182 / 2SB1240 /2SB891F / 2SB822 / 2SB1277 /2SB911MFStructureEpitaxial planar typeNPN silicon transistor(96-217-B24)2562SD1766 /

 8.3. Size:44K  panasonic
 2sd1051 e.pdf pdf_icon

2SD1052A

Transistor2SD1051Silicon NPN epitaxial planer typeFor low-frequency power amplificationUnit: mmComplementary to 2SB8196.9 0.1 2.5 0.11.51.5 R0.9 1.0R0.9FeaturesHigh collector to emitter voltage VCEO.Large collector power dissipation PC.M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board.0.850.5

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Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2N332A | BDW24 | BC847RA | MMBT3906HE3 | 2SB744A | 2N2874 | 2SD551

Keywords - 2SD1052A transistor datasheet

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