2SD1066 Datasheet, Equivalent, Cross Reference Search

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Ordering number : EN686J2SB824 / 2SD1060SANYO SemiconductorsDATA SHEETPNP / NPN Epitaxial Planar Silicon Transistors2SB824 / 2SD106050V / 5A Switching ApplicationsApplications Suitable for relay drivers, high-speed inverters, converters, and other general large-current switching.Features Low collector-to-emitter saturation voltage : VCE(sat)= (--)0.4V max / IC= (--)3A,

Ordering number:687GPNP/NPN Epitaxial Planar Silicon Transistors2SB825/2SD106150V/7A Switching ApplicationsApplications Package Dimensions Universal high current switching as solenoid driving,unit:mmhigh speed inverter and converter.2010C[2SB825/2SD1061]Features Low saturation voltage : VCE(sat)=()0.4V max. Wide ASOJEDEC : TO-220AB 1: Base( ) : 2SB825EI

Ordering number:688HPNP/NPN Epitaxial Planar Silicon Tranasistors2SB827/2SD106350V/7A Switching ApplicationsaApplications Package Dimensions Universal high current switching as solenoid driving,unit:mmhigh speed inverter and converter.2022A[2SB827/2SD1063]Features Low collector-to-emitter saturation voltage : VCE(sat)=()0.4V max. Wide ASO.1 : Base2 : Co

Ordering number:825CPNP/NPN Epitaxial Planar Silicon Tranasistors2SB829/2SD106550V/15A Switching ApplicationsApplications Package Dimensions Relay drivers, high-speed inverters, converters, andunit:mmother general high-current switching applications.2022A[2SD829/2SD1065]Features Low-saturation collector-to-emitter voltage : VCE(sat) =0.5V max. Wide ASO lead

Ordering number:723HPNP/NPN Epitaxial Planar Silicon Transistors2SB826/2SD106250V/12A Switching ApplicationsApplications Package Dimensions Relay drivers, high-speed inverters, converters, andunit:mmother general high-current switching applications.2010C[2SB826/2SD1062]Features Low-saturation collector-to-emitter voltage :VCE(sat)=0.5V (PNP), 0.4V (NPN) max.

Ordering number:722GPNP/NPN Epitaxial Planar Silicon Tranasistors2SB828/2SD106450V/12A Switching ApplicationsApplications Package Dimensions Relay drivers, high-speed inverters, converters, andunit:mmother general high-current switching applications.2022A[2SB828/2SD1064]Features Low-saturation collector-to-emitter voltage : VCE(sat)=0.5V(PNP), 0.4V(NPN) max.

Ordering number : EN686K2SD1060Bipolar Transistorhttp://onsemi.com( )50V, 5A, Low VCE sat NPN TO-220-3LApplications Suitable for relay drivers, high-speed inverters, converters, and other general large-current switchingFeatures Low collector-to-emitter saturation voltage : VCE(sat)=0.3V max / IC=3A, IB= 0.3ASpecificationsAbsolute Maximum Ratings at Ta=25CParamete

UNISONIC TECHNOLOGIES CO., LTD 2SD1060 NPN SILICON TRANSISTOR NPN PLANAR SILICON TRANSISTOR FEATURES * Low collector-to-emitter saturation voltage: VCE(SAT)=0.4V max/IC=3A, IB=0.3A ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SD1060L-x-AB3-R 2SD1060G-x-AB3-R SOT-89 B C E Tape Reel2SD1060L-x-T60-K 2SD1060G-x-T6

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1060 DESCRIPTION With TO-220 package Low collector-emitter saturation voltage Complement to type 2SB824 APPLICATIONS Suitable for relay drivers,high-speed Inverters,converters,and other general large-current switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 m

Product Specification www.jmnic.comSilicon NPN Power Transistors 2SD1062 DESCRIPTION With TO-220 package Low collector saturation voltage Complement to type 2SB826 Wide area of safe operation APPLICATIONS Relay drivers, High-speed inverters, Converters General high-current switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SD1060DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 0.4V(Max) @I = 3.0ACE(sat) CComplement to Type 2SB824APPLICATIONSDesigned for relay drivers, high-speed inverters, converters,and other general large-current switching application

isc Silicon NPN Power Transistor 2SD1060DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 0.4V(Max) @I = 3.0ACE(sat) CComplement to Type 2SB824Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for relay drivers, high-speed inverters, converters,

isc Silicon NPN Power Transistors 2SD1063DESCRIPTIONLow Collector Saturation Voltage: V = 0.4V(Max)@ I = 4ACE(sat) CWide Area of Safe OperationComplement to Type 2SB827Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for universal high current switching as solenoiddriving, high speed inverter and converter appl

isc Silicon NPN Power Transistor 2SD1069DESCRIPTIONHigh Collector Current CapabilityHigh Collector Power Dissipation CapabilityBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSTV horizontal deflection output applications.High voltage switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

isc Silicon NPN Power Transistor 2SD1061DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 0.4V(Max) @I = 4.0ACE(sat) CComplement to Type 2SB825Wide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general high curre

isc Silicon NPN Power Transistors 2SD1065DESCRIPTIONLow Collector Saturation Voltage: V = 0.4V(Max)@ I = 8ACE(sat) CWide Area of Safe OperationComplement to Type 2SB829Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for relay drivers , high-speed inverters,converters,and other general high-current switchinga

isc Silicon NPN Power Transistors 2SD1062DESCRIPTIONLow Collector Saturation Voltage: V = 0.4V(Max)@ I =6ACE(sat) CWide Area of Safe OperationComplement to Type 2SB826Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for relay drivers, high-speed inverters, converters,and other general high-current switching app

isc Silicon NPN Power Transistors 2SD1064DESCRIPTIONLow Collector Saturation Voltage: V = 0.4V(Max)@ I = 6ACE(sat) CWide Area of Safe OperationComplement to Type 2SB828Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for relay drivers , high-speed inverters,converters,and other general high-current switchinga