2SD107 Specs and Replacement
Type Designator: 2SD107
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN: 4000
Package: TO3
2SD107 Substitution
- BJT ⓘ Cross-Reference Search
2SD107 datasheet
Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com ... See More ⇒
Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com ... See More ⇒
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1073 DESCRIPTION With TO-220 package High DC current gain DARLINGTON Low saturation voltage APPLICATIONS Audio power amplifiers Relay and solenoid drivers Motor controls General purpose power amplifiers PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting ba... See More ⇒
Detailed specifications: 2SD1065, 2SD1065Q, 2SD1065R, 2SD1065S, 2SD1066, 2SD1067, 2SD1068, 2SD1069, BD135, 2SD1070, 2SD1071, 2SD1072, 2SD1073, 2SD1074, 2SD1075, 2SD1076, 2SD1077
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