2SD1075 Specs and Replacement
Type Designator: 2SD1075
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 100
Package: TO218
2SD1075 Substitution
- BJT ⓘ Cross-Reference Search
2SD1075 datasheet
Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com ... See More ⇒
Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com ... See More ⇒
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1073 DESCRIPTION With TO-220 package High DC current gain DARLINGTON Low saturation voltage APPLICATIONS Audio power amplifiers Relay and solenoid drivers Motor controls General purpose power amplifiers PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting ba... See More ⇒
Detailed specifications: 2SD1068, 2SD1069, 2SD107, 2SD1070, 2SD1071, 2SD1072, 2SD1073, 2SD1074, 2SD2499, 2SD1076, 2SD1077, 2SD1077L, 2SD1077S, 2SD1078, 2SD1079, 2SD108, 2SD1080
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