All Transistors. 2SD1081S Datasheet

 

2SD1081S Datasheet and Replacement


   Type Designator: 2SD1081S
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 20 W
   Maximum Collector-Base Voltage |Vcb|: 180 V
   Maximum Collector-Emitter Voltage |Vce|: 160 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: TO218
 

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2SD1081S Datasheet (PDF)

 8.1. Size:111K  mospec
 2sd1088.pdf pdf_icon

2SD1081S

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 8.2. Size:56K  no
 2sd1083.pdf pdf_icon

2SD1081S

 8.3. Size:180K  inchange semiconductor
 2sd108.pdf pdf_icon

2SD1081S

INCHANGE Semiconductorisc Silicon NPN Darlingtion Power Transistor 2SD108DESCRIPTIONHigh DC current gain-: h = 2000 (Min) @ I = 1AFE CCollector-Emitter Sustaining Voltage-: V =80V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower switchingHammer driversSeries and shunt regulatorAudio amplifi

 8.4. Size:212K  inchange semiconductor
 2sd1088.pdf pdf_icon

2SD1081S

isc Silicon NPN Darlington Power Transistor 2SD1088DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 250V(Min)CEO(SUS)High DC Current Gain-: h = 2000(Min.)@I = 2AFE CLow Collector-Emitter Saturation Voltage-: V = 2.0V(Max) @I = 4ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in hig

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Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , TIP42C , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

History: UN511V | SST2907A | MJ11020 | 2SD1133B | 2SD1115K | 2SD1115 | 2SCR554R

Keywords - 2SD1081S transistor datasheet

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