All Transistors. 2SD1087 Datasheet

 

2SD1087 Datasheet and Replacement


   Type Designator: 2SD1087
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 100 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 15 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 15 MHz
   Collector Capacitance (Cc): 280 pF
   Forward Current Transfer Ratio (hFE), MIN: 3000
   Noise Figure, dB: -
   Package: MT-200
 

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2SD1087 Datasheet (PDF)

 8.1. Size:111K  mospec
 2sd1088.pdf pdf_icon

2SD1087

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 8.2. Size:56K  no
 2sd1083.pdf pdf_icon

2SD1087

 8.3. Size:180K  inchange semiconductor
 2sd108.pdf pdf_icon

2SD1087

INCHANGE Semiconductorisc Silicon NPN Darlingtion Power Transistor 2SD108DESCRIPTIONHigh DC current gain-: h = 2000 (Min) @ I = 1AFE CCollector-Emitter Sustaining Voltage-: V =80V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower switchingHammer driversSeries and shunt regulatorAudio amplifi

 8.4. Size:212K  inchange semiconductor
 2sd1088.pdf pdf_icon

2SD1087

isc Silicon NPN Darlington Power Transistor 2SD1088DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 250V(Min)CEO(SUS)High DC Current Gain-: h = 2000(Min.)@I = 2AFE CLow Collector-Emitter Saturation Voltage-: V = 2.0V(Max) @I = 4ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in hig

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Datasheet: 2SD1081S , 2SD1082 , 2SD1083 , 2SD1083L , 2SD1083S , 2SD1084 , 2SD1085 , 2SD1085K , 2SD669 , 2SD1088 , 2SD1089 , 2SD1090 , 2SD1091 , 2SD1092 , 2SD1093 , 2SD1094 , 2SD1095 .

History: 2SA322 | 2SD1065Q | MM1164 | MA0404-2 | CSC460A | PZT2222 | 2N3195

Keywords - 2SD1087 transistor datasheet

 2SD1087 cross reference
 2SD1087 equivalent finder
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