2SD1093 Specs and Replacement
Type Designator: 2SD1093
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 1000 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 7 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 30
Package: TO3
2SD1093 Substitution
- BJT ⓘ Cross-Reference Search
2SD1093 datasheet
isc Product Specification isc Silicon NPN Power Transistor 2SD1095 DESCRIPTION High Voltage Capability Excellent Safe Operating Area Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators Motor controls . DC-DC converters . Absolute maximum ratings(Ta=25 ) SYM... See More ⇒
Detailed specifications: 2SD1085, 2SD1085K, 2SD1087, 2SD1088, 2SD1089, 2SD1090, 2SD1091, 2SD1092, 2SD669, 2SD1094, 2SD1095, 2SD1096, 2SD1097, 2SD1098, 2SD1099, 2SD11, 2SD110
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