2SD1095 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SD1095
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 1200 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 175 °C
Forward Current Transfer Ratio (hFE), MIN: 200
Noise Figure, dB: -
Package: TO3
2SD1095 Transistor Equivalent Substitute - Cross-Reference Search
2SD1095 Datasheet (PDF)
2sd1095.pdf
isc Product Specificationisc Silicon NPN Power Transistor 2SD1095DESCRIPTIONHigh Voltage CapabilityExcellent Safe Operating AreaFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsMotor controls .DC-DC converters .Absolute maximum ratings(Ta=25)SYM
2sd1094.pdf
isc Product Specificationisc Silicon NPN Power Transistor 2SD1094DESCRIPTIONHigh Voltage CapabilityHigh Current CapabilityFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching and general purpose poweramplifiers applications .Absolute maximum ratings(Ta=25
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
