2SD1101 Datasheet, Equivalent, Cross Reference Search

2SD1101Silicon NPN EpitaxialApplication Low frequency amplifier Complementary pair with 2SB831OutlineMPAK311. Emitter2. Base23. Collector2SD1101Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 25 VCollector to emitter voltage VCEO 20 VEmitter to base voltage VEBO 5VCollector current IC 0.7 ACollector peak

SMD Type TransistorsNPN Transistors2SD1101SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=0.7A1 2 Collector Emitter Voltage VCEO=20V+0.10.95-0.1 0.1+0.05-0.01 Complement to 2SB831 +0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base

isc Silicon NPN Power Transistor 2SD110DESCRIPTIONVHigh Power Dissipation-: P = 100W@T = 25C CHigh Current Capability-: I = 10ACMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier , power switching ,DC-DCconverter and regulator applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR

isc Silicon NPN Power Transistor 2SD1105DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V (Min)(BR)CEOWide Area of Safe OperationHigh Power and High ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power AF amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

Transistor2SD1198, 2SD1198ASilicon NPN epitaxial planer type darlingtonUnit: mmFor low-frequency amplification6.9 0.1 2.5 0.1Features 1.51.5 R0.9 1.0Forward current transfer ratio hFE is designed high, which is ap-R0.9propriate to the driver circuit of motors and printer bammer: hFE= 4000 to 40000.A shunt resistor is omitted from the driver.M type package allowin

2SD1140 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Darlington power transistor) 2SD1140 Micro Motor Drive, Hammer Drive Applications Unit: mm Switching Applications Power Amplifier Applications High DC current gain: hFE = 4000 (min) (V = 2 V, I = 150 mA) CE C Low saturation voltage: V = 1.5 V (max) (I = 1 A, I = 1 mA) CE (sat) C BMaximum Ratings (

2SD1160 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SD1160 Switching Applications Unit: mm Suitable for Motor Drive Applications High DC current gain Low saturation voltage: V = 0.6 V (max) (I = 2A, I = 40 mA) CE (sat) C B Built-in free wheel diode Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 50 V

Ordering number:1036BPNP/NPN Epitaxial Planar Silicon Darlington Transistors2SB883/2SD1193Driver ApplicationsApplications Package Dimensions Motor drivers, printer hammer drivers, relay drivers,unit:mmvoltage regulator control.2022A[2SB883/2SD1193]Features High DC current gain. High current capacity and wide ASO. Low saturation voltage.1 : Base2 : Colle

Ordering number:828DPNP/NPN Epitaxial Planar Silicon Darlington Tranasistors2SB865/2SD1153Drivers ApplicationsApplications Package Dimensions Relay drivers, hammer drivers, lamp drivers, motorunit:mmdrivers.2006A[2SB865/2SD1153]Features High DC current gain (4000 or more). Large current capacity and wide ASO. Low saturation voltage.EIAJ : SC-51 B : Base

Ordering number:EN751CNPN Epitaxial Planar Silicon Darlington Transistor2SD1111Driver ApplicationsApplications Package Dimensions Motor drivers, printer hammer drivers, relay drivers,unit:mmvoltage regulator control.2003B[2SD1111]5.0Features4.04.0 High DC Current Gain (5000 or greater). Large current capacity and wide ASO. Low saturation voltage (VCE(

Ordering number:EN837ENPN Triple Diffused Planar Silicon Transistor2SD1159TV Horizontal Deflection Output,High-Current Switching ApplicationsFeatures Package Dimensions Capable of efficient drive with small internal loss dueunit:mmto excellent tf.2010C[2SD1159]10.24.53.65.11.31.21 : Base0.80.42 : Collector1 2 33 : EmitterJEDEC : TO-220AB2.55 2.

Ordering number:927EPNP/NPN Epitaxial Planar Silicon Darlington Transistors2SB885/2SD1195Driver ApplicationsApplications Package Dimensions Motor drivers, printer hammer drivers, relay drivers,unit:mmvoltage regulator control.2010C[2SB885/2SD1195]Features High DC current gain. High current capacity and wide ASO. Low saturation voltage.JEDEC : TO-220AB 1 :

Ordering number:EN784ENPN Epitaxial Planar Silicon Transistor2SD1145High-Current Driver ApplicationsApplications Package Dimensions Relay drivers, hammer drivers, lamp drivers, strobeunit:mmDC-DC converters, motor drivers.2006B[2SD1145]6.0Features 5.0 4.7 Low saturation voltage. Large current capacity and wide ASO.0.50.60.5 0.51 : Emitter2 : Collecto

Ordering number:928CPNP/NPN Epitaxial Planar Silicon Darlington Transistors2SB886/2SD1196Driver ApplicationsApplications Package Dimensions Motor drivers, printer hammer drivers, relay drivers,unit:mmvoltage regulator control.2010C[2SB886/2SD1196]Features High DC current gain. High current capacity and wide ASO. Low saturation voltage.JEDEC : TO-220AB 1 :

Ordering number:926CPNP/NPN Epitaxial Planar Silicon Darlington Tranasistors2SB882/2SD1192 Driver ApplicationsApplications Package Dimensions Motor drivers, printer hammer drivers, relay drivers,unit:mmvoltage regulator control.2010C[2SB882/2SD1192]Features High DC current gain. High current capacity and wide ASO. Low saturation voltage.JEDEC : TO-220AB 1

Ordering number:1079APNP/NPN Epitaxial Planar Silicon Darlington Transistors2SB887/2SD1197Driver ApplicationsFeatures Package Dimensions Motor drivers, printer hammer drivers, relay drivers,unit:mmvoltage regulator control.2022A[2SB887/2SD1197]Features High DC current gain. Large current capacity and wide ASO. Low saturation voltage.1 : Base2 : Collecto

Ordering number:1018EPNP/NPN Epitaxial Planar Silicon Darlington Transistors2SB884/2SD1194Driver ApplicationsApplications Package Dimensions Motor drivers, printer hammer drivers, relay drivers,unit:mmvoltage regulator control.2010C[2SB884/2SD1194]Features High DC current gain. High current capacity and wide ASO. Low saturation voltage.JEDEC : TO-220AB 1

Ordering number:925EPNP/NPN Epitaxial Planar Silicon Darlington Tranasistors2SB881/2SD1191 Driver ApplicationsApplications Package Dimensions Motor drivers, printer hammer drivers, relay drivers,unit:mmvoltage regulator control.2010C[2SB881/2SD1191]Features High DC current gain. High current capacity and wide ASO. Low saturaion voltage.JEDEC : TO-220AB 1

Ordering number:924EPNP/NPN Epitaxial Planar Silicon Darlington Tranasistors2SB880/2SD1190For Various Drivers ApplicationsApplications Package Dimensions Motor drivers, printer hammer drivers, relay drivers,unit:mmvoltage regulators.2010C[2SB880/2SD1190]Features High DC current gain. Large current capacity and wide ASO. Low saturation voltage.JEDEC : TO-2

To all our customersRegarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

Transistor2SD1119Silicon NPN epitaxial planer typeFor low-frequency power amplificationUnit: mm1.5 0.14.5 0.11.6 0.2FeaturesLow collector to emitter saturation voltage VCE(sat).Satisfactory operation performances at high efficiency with the45low-voltage power supply.Mini type package, allowing downsizing of the equipment and0.4 0.08automatic insertion thr

Transistor2SD1199Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mm6.9 0.1 2.5 0.11.51.5 R0.9 1.0Features R0.9High foward current transfer ratio hFE.Low collector to emitter saturation voltage VCE(sat).High emitter to base voltage VEBO.Low noise voltage NV.0.85M type package allowing easy automatic and manual insertion aswell as stand-alon

Transistor2SD1198, 2SD1198ASilicon NPN epitaxial planer type darlingtonUnit: mmFor low-frequency amplification6.9 0.1 2.5 0.1Features 1.51.5 R0.9 1.0Forward current transfer ratio hFE is designed high, which is ap-R0.9propriate to the driver circuit of motors and printer bammer: hFE= 4000 to 40000.A shunt resistor is omitted from the driver.M type package allowin

Transistor2SD1198, 2SD1198ASilicon NPN epitaxial planer type darlingtonUnit: mmFor low-frequency amplification6.9 0.1 2.5 0.1Features 1.51.5 R0.9 1.0Forward current transfer ratio hFE is designed high, which is ap-R0.9propriate to the driver circuit of motors and printer bammer: hFE= 4000 to 40000.A shunt resistor is omitted from the driver.M type package allowin

Transistor2SD1119Silicon NPN epitaxial planer typeFor low-frequency power amplificationUnit: mm1.5 0.14.5 0.11.6 0.2FeaturesLow collector to emitter saturation voltage VCE(sat).Satisfactory operation performances at high efficiency with the45low-voltage power supply.Mini type package, allowing downsizing of the equipment and0.4 0.08automatic insertion thr

Transistor2SD1149Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mm+0.22.8 0.3+0.250.65 0.15 1.5 0.05 0.65 0.15FeaturesHigh foward current transfer ratio hFE. 1Low collector to emitter saturation voltage VCE(sat).High emitter to base voltage VEBO.3Mini type package, allowing downsizing of the equipment andautomatic insertion throug

Transistor2SD1199Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mm6.9 0.1 2.5 0.11.51.5 R0.9 1.0Features R0.9High foward current transfer ratio hFE.Low collector to emitter saturation voltage VCE(sat).High emitter to base voltage VEBO.Low noise voltage NV.0.85M type package allowing easy automatic and manual insertion aswell as stand-alon

Transistor2SD1149Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mm+0.22.8 0.3+0.250.65 0.15 1.5 0.05 0.65 0.15FeaturesHigh foward current transfer ratio hFE. 1Low collector to emitter saturation voltage VCE(sat).High emitter to base voltage VEBO.3Mini type package, allowing downsizing of the equipment andautomatic insertion throug

Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com

Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com

2SD1137Silicon NPN Triple DiffusedApplicationLow frequency power amplifier TV vertical deflection output complementary pair with 2SB860OutlineTO-220AB1. Base2. Collector(Flange)13. Emitter23Absolute Maximum Ratings (Ta = 25C)Item Symbol Rating UnitCollector to base voltage VCBO 100 VCollector to emitter voltage VCEO 100 VEmitter to base voltage VEBO 4VColl

2SD1138Silicon NPN Triple DiffusedApplicationLow frequency high voltage power amplifier TV vertical deflection output complementary pair with2SB861OutlineTO-220AB1. Base2. Collector(Flange)13. Emitter232SD1138Absolute Maximum Ratings (Ta = 25C)Item Symbol Rating UnitCollector to base voltage VCBO 200 VCollector to emitter voltage VCEO 150 VEmitter to bas

2SD1113(K)Silicon NPN Triple DiffusedApplicationIgniterOutlineTO-220AB211. Base2. Collector(Flange)13. Emitter 6 k 450 23(Typ) (Typ)3Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 300 VCollector to emitter voltage VCEO 300 VEmitter to base voltage VEBO 7VCollector current IC 6ACollector peak current

To all our customersRegarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

To all our customersRegarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

2SD1133, 2SD1134Silicon NPN Triple DiffusedApplicationLow frequency power amplifier complementary pair with 2SB857 and 2SB858OutlineTO-220AB1. Base2. Collector(Flange)13. Emitter23Absolute Maximum Ratings (Ta = 25C)RatingsItem Symbol 2SD1133 2SD1134 UnitCollector to base voltage VCBO 70 70 VCollector to emitter voltage VCEO 50 60 VEmitter to base voltage VE

2SD1126(K)Silicon NPN Triple DiffusedApplicationPower switchingOutlineTO-220AB211. BaseID2. Collector(Flange)13. Emitter 1.5 k 130 23(Typ) (Typ)32SD1126(K)Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 120 VCollector to emitter voltage VCEO 120 VEmitter to base voltage VEBO 7VCollector current IC

NPN TRIPLE DIFFUSED2SD1168 PLANAR SILICON TRANSISTORCOLOR TV HORIZONTAL OUTPUTAPPLICATIONS (No Damper Diode) TO-3 High Collector-Base Voltage(VCBO=1500V) High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 800 V Emitter-Base voltage VEBO 6 V Collector

NPN TRIPLE DIFFUSED2SD1175 PLANAR SILICON TRANSISTORCOLOR TV HORIZONTAL OUTPUTAPPLICATIONS (Damper Diode BUILT IN) High Collector-Base Voltage(VCBO=1500V) TO-3 High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 1500 V Emitter-Base voltage VEBO 6 V Coll

2SD1148 NPN PLANAR SILICON TRANSISTORAUDIO POWER AMPLIFIERDC TO DC CONVERTER SC-65 High Current Capability High Power Dissipation Complementary to 2SB863 ABSOLUTE MAXIMUM RATING (T =25)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 200 V Collector-Emitter Voltage VCEO 140 V Emitter-Base voltage VEBO 6 V Collector Current (DC) IC 10 A

2SD1128 NPN SILICON DARLINGTON TRANSISTORSWITCHING REGULATORS PWM INVERTERSSOLENOID AND RELAY DRIVERSTO-220ABSOLUTE MAXIMUM RATINGS (T =25)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 150 V Collector-Emitter Voltage VCEO 100 V Collector Current (DC) IC 5 A Collector Dissipation (Tc=25 PC 30 W Junction Temperature Tj 150

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1193 DESCRIPTION With TO-3PN package Complement to type 2SB883 High DC current gain High current capacity and wide ASO Low saturation voltage APPLICATIONS Motor drivers, printer hammer drivers, relay drivers,voltage regulator control. PINNING PIN DESCRIPTION1 Base Collector;connected to

Product Specification www.jmnic.comSilicon NPN Power Transistors 2SD1196 DESCRIPTION With TO-220 package High DC current gain. High current capacity and wide ASO. Low saturation voltage. APPLICATIONS Motor drivers, printer hammer drivers, relay drivers,voltage regulator control. PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 Emit

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1197 DESCRIPTION With TO-3PN package High DC current gain. Large current capacity and wide ASO. Low saturation voltage. APPLICATIONS Motor drivers, printer hammer drivers, relay drivers,voltage regulator control. PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 Em

2SD1119SOT-89 TRANSISTOR (NPN)1. BASE FEATURES Low collector-emitter saturation voltage VCE(sat) 2. COLLECTOR 1 Satisfactory operation performances at high efficiency with the low 2 voltage power supply. 3. EMITTER 3 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector- Base Voltage 40 V VCEO Collector-Emitter Voltage

2SD1119SOT-89 Transistor(NPN)1. BASE SOT-892. COLLECTOR 1 4.62 B4.41.61.83. EMITTER 1.43 1.42.64.25Features 2.43.75 0.8 Low collector-emitter saturation voltage VCE(sat) MIN0.53 Satisfactory operation performances at high efficiency with the low 0.40 0.480.442x)0.13 B0.35 0.371.5voltage power supply. 3.0Dimensions in inches a

ST 2SD1163A NPN Silicon Epitaxial Planar Transistor for TV horizontal deflection output applications TO-220 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit350 VCollector Base Voltage VCBO 150 VCollector Emitter Voltage VCEO 6 VEmitter Base Voltage VEBO 7 ACollector Current IC 10 ACollector Peak Current ICP 20 ACollector Surge

SMD Type TransistorsNPN Darlington Transistors2SD1164TO-252Unit: mm6.50+0.15-0.15+0.12.30 -0.15.30+0.2-0.2 +0.80.50 -0.7 Features4 Collector Current Capability IC=2A Collector Emitter Voltage VCEO=60V0.1270.80+0.1 max-0.11 Base+ 0.12.3 0.60- 0.12 Collector+0.153 Emitter4.60 -0.154 Collector Absolute Maximum Ratings Ta = 25

SMD Type TransistorsNPN Transistors2SD11191.70 0.1 Features Collector Current Capability IC=3 A Collector Emitter Voltage VCEO=25 V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collector - Emitter Voltage VCEO 25 V Emitter - Base Voltage VEBO 7 Collector

SMD Type TransistorsNPN Transistors2SD1149SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=20mA1 2 Collector Emitter Voltage VCEO=100V+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 100 Colle

isc Silicon NPN Darlington Power Transistor 2SD1193DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOHigh DC Current Gain: h = 2000(Min) @I = 7.0AFE CLow Saturation VoltageComplement to Type 2SB883Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for motor drivers, printer hammer drivers,

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1139DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 200V (Min)(BR)CEOWide Area of Safe Operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier TV verticaldeflection output applications

isc Silicon NPN Power Transistor 2SD1186DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500 VCBOV Collector-Emitte

isc Silicon NPN Power Transistor 2SD1168DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base

isc Silicon NPN Darlington Power Transistor 2SD1141DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 300V(Min)CEO(SUS)High DC Current Gain: h = 500(Min)@I = 4AFE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage switching, igniter applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1170DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min.)(BR)CEOLow Collector Saturation VoltageHigh DC Current Gain100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDriver for solenoid,motor and general purpose applic

isc Silicon NPN Darlington Power Transistor 2SD1127DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 120V(Min)CEO(SUS)High DC Current Gain: h = 1000(Min) @I = 10AFE CLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)

isc Silicon NPN Power Transistor 2SD1117DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 40V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 1.2V(Max) @I = 5ACE(sat) CWide Area of Safe OperationComplement to Type 2SB850Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio amplifier, ser

isc Silicon NPN Power Transistor 2SD1133DESCRIPTIONCollector Current: I = 4ACLow Collector Saturation Voltage: V = 1.0V(Max)@I = 2ACE(sat) CHigh Collector Power DissipationComplement to Type 2SB857Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXI

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1175DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOCollector-Emitter Saturation Voltage-: V = 6.0V(Max.)@ I = 5.0ACE(sat) CBuilt-in Damper DiodeWide area of safe operationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal defl

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1180DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 110V (Min)(BR)CEOLow collector saturation voltageWith TO-126 packageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in audio and radio frequency power amplifiersapplications.ABSOL

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1184DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh ReliabilityWide area of safe operationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

isc Silicon NPN Power Transistor 2SD1136DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V (Min)(BR)CEOWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching and TV horizontal deflectionoutput applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1142DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOCollector-Emitter Saturation Voltage-: V = 4.0V(Max.)@ I = 2.5ACE(sat) CBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.AB

isc Silicon NPN Darlington Power Transistor 2SD1115DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 300V(Min)CEO(SUS)High DC Current Gain: h = 500(Min)@I = 2AFE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage switching, igniter applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1124DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 80V(Min)CEO(SUS)High DC Current Gain: h = 1000(Min) @I = 1AFE C100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose amplifier and low-speedswi

isc Silicon NPN Power Transistor 2SD1157DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOHigh DC Current Gain-: h = 250V(Min.) @I = 0.5AFE CLow Collector Saturation VoltageHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsDC-DC converterSolid sate relay

isc Silicon NPN Power Transistor 2SD1118DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOHigh DC Current Gain-: h = 300V(Min.) @I = 1AFE CLow Collector Saturation VoltageHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsDC-DC converterSolid sate relay

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1172DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOCollector-Emitter Saturation Voltage-: V = 4.0V(Max.)@ I = 2.5ACE(sat) CBuilt-in Damper DiodeWide area of safe operationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal defl

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1114DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 400V(Min)CEO(SUS)High DC Current Gain: h = 500(Min) @I = 4AFE C100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSolenoid/ relay driversMotor controlElectronic au

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1187DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOGood Linearity of hFECollector-Emitter Saturation Voltage-: V = 0.5V(Max.)@ I = 6.0ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh power switching applicationsDC-DC

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1173DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOCollector-Emitter Saturation Voltage-: V = 4.0V(Max.)@ I = 3.0ACE(sat) CBuilt-in Damper DiodeWide area of safe operationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal defl

isc Silicon NPN Power Transistor 2SD1159DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 1.0V(Max) @I = 4ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV horizontal deflection output, high-currentswitching applications.ABSOLUTE

isc Silicon NPN Darlington Power Transistor 2SD1162DESCRIPTIONHigh DC Current Gain-: h = 400(Min.)@I = 2AFE CHigh Switching SpeedLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, low speed switching industrialuse.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PA

isc Silicon NPN Power Transistor 2SD114DESCRIPTIONHigh DC Current Gain-: h = 25-100@I = 7.5AFE CExcellent Safe Operating AreaMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as an output device in complementaryaudio amplifiers to 100-Watts music power per channel.ABSOLUTE MAXIMUM RATINGS(T =25)aSYM

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1115K DESCRIPTION With TO-220 package DARLINGTON APPLICATIONS For high voltage switching and ignitor applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collecto

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1163,2SD1163A DESCRIPTION With TO-220 package Low collector saturation voltage APPLICATIONS TV horizontal deflection output, PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT2SD1

isc Silicon NPN Power Transistor 2SD1158DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOHigh DC Current Gain-: h = 250V(Min.) @I = 1AFE CLow Collector Saturation VoltageHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operatiAPPLICATIONSSwitching regulatorsDC-DC converterSolid sate relay

isc Silicon NPN Power Transistor 2SD1148DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 140V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SB863Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 70W high fidelity audio frequencyamplifier output stage applications

isc Silicon NPN Darlington Power Transistor 2SD1195DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOHigh DC Current Gain: h = 1500(Min) @I = 2.5AFE CLow Saturation VoltageComplement to Type 2SB885Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for motor drivers, printer hammer drivers

isc Silicon NPN Power Transistor 2SD1137DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 100V (Min)(BR)CEOWide Area of Safe OperationComplement to Type 2SB860Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier TV verticaldeflection output applicationsABSOLUTE MAXIMUM RA

isc Silicon NPN Darlington Power Transistor 2SD1196DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOHigh DC Current Gain: h = 1500(Min) @I = 4AFE CLow Saturation VoltageComplement to Type 2SB886Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for motor drivers, printer hammer drivers,

isc Silicon NPN Power Transistor 2SD1110DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SB849Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER V

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1171DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOCollector-Emitter Saturation Voltage-: V = 4.0V(Max.)@ I = 2.0ACE(sat) CBuilt-in Damper DiodeWide area of safe operationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal defl

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1128DESCRIPTIONExcellent linearity in hFEHigh DC Current GainHigh ReliabilityExcellent Safe Operating AreaMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor & B/W TV powersupply Active power filterIndustrial use power supply (series regul

isc Silicon NPN Darlington Power Transistor 2SD1192DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOHigh DC Current Gain: h = 2000(Min) @I = 5.0AFE CLow Saturation VoltageComplement to Type 2SB882Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for motor drivers, printer hammer drivers,

isc Silicon NPN Power Transistor 2SD1185DESCRIPTIONHigh Breakdown Voltage-: V = 1200V (Min)CBOHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1200 VCBOV Collector-Emitte

isc Silicon NPN Power Transistor 2SD1163ADESCRIPTIONCollector Current: I = 7ACCollector-Emitter Breakdown Voltage-: V = 150V(Min)(BR)CEO100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV horizontal deflection applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1183DESCRIPTIONHigh Breakdown Voltage-: V = 1200V (Min)CBOHigh ReliabilityWide area of safe operationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

isc Silicon NPN Power Transistor 2SD113DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V (Min)(BR)CEOHigh Power DissipationHigh Current CapabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio power amplifier, power switching applications.DC-DC converter and regulator applications.ABSOLUTE MAXIMUM RAT

isc Silicon NPN Power Transistor 2SD1154DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 200V (Min)(BR)CEOWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output for B/W TV set.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER MAX UNITV Collector-Base

isc Silicon NPN Power Transistor 2SD1138DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 150V (Min)(BR)CEOWide Area of Safe OperationComplement to Type 2SB861Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier TV verticaldeflection output applicationsABSOLUTE MAXIMUM RA

isc Silicon NPN Darlington Power Transistor 2SD1197DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOHigh DC Current Gain: h = 1500(Min) @I = 5AFE CLow Saturation VoltageComplement to Type 2SB887Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for motor drivers, printer hammer drivers,

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1113DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 300V(Min)CEO(SUS)High DC Current Gain: h = 500(Min) @I = 4AFE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSIgniterABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Col

isc Silicon NPN Power Transistor 2SD1135DESCRIPTIONCollector Current: I = 4ACLow Collector Saturation Voltage: V = 2.0V(Max)@I = 2ACE(sat) CHigh Collector Power DissipationComplement to Type 2SB859Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXI

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1194DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOHigh DC Current Gain: h = 1500(Min) @I = 1.5AFE CLow Saturation VoltageComplement to Type 2SB884Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for motor drivers

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1143DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOCollector-Emitter Saturation Voltage-: V = 5.0V(Max.)@ I = 5ACE(sat) CBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSO

isc Silicon NPN Power Transistor 2SD1134DESCRIPTIONCollector Current: I = 4ACLow Collector Saturation Voltage: V = 1.0V(Max)@I = 2ACE(sat) CHigh Collector Power DissipationComplement to Type 2SB858Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXI

isc Silicon NPN Power Transistor 2SD1163DESCRIPTIONCollector Current: I = 7ACCollector-Emitter BreakdownVoltage-: V = 120V(Min.)(BR)CEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV horizontal deflection applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Vol

isc Silicon NPN Darlington Power Transistor 2SD1191DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOHigh DC Current Gain: h = 2000(Min) @I = 3.5AFE CLow Saturation VoltageComplement to Type 2SB881Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for motor drivers, printer hammer drivers,

isc Silicon NPN Power Transistor 2SD111DESCRIPTIONHigh Power Dissipation-: P = 100W@T = 25C CHigh Current Capability-: I = 10ACMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier , power switching ,DC-DCconverter and regulator applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA

isc Silicon NPN Darlington Power Transistor 2SD1126DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOHigh DC Current Gain: h = 1000(Min) @I = 5AFE CLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)a

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1190DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOHigh DC Current Gain: h = 2000(Min) @I = 2AFE CLow Saturation VoltageComplement to Type 2SB880Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for motor drivers, p