All Transistors. 2N222 Datasheet

 

2N222 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2N222

Material of Transistor: Ge

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 0.07 W

Maximum Collector-Base Voltage |Vcb|: 15 V

Maximum Collector-Emitter Voltage |Vce|: 12 V

Maximum Collector Current |Ic max|: 0.07 A

Max. Operating Junction Temperature (Tj): 85 °C

Transition Frequency (ft): 0.4 MHz

Collector Capacitance (Cc): 70 pF

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO1

2N222 Transistor Equivalent Substitute - Cross-Reference Search

 

2N222 Datasheet (PDF)

0.1. mtp2n2222a p2n2222a.pdf Size:238K _motorola

2N222
2N222

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby P2N2222A/DAmplifier TransistorsNPN SiliconP2N2222ACOLLECTOR12BASE3EMITTERMAXIMUM RATINGSRating Symbol Value Unit

0.2. 2n2222 2n2222a cnv 2.pdf Size:53K _philips

2N222
2N222

DISCRETE SEMICONDUCTORSDATA SHEETM3D1252N2222; 2N2222ANPN switching transistors1997 May 29Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN switching transistors 2N2222; 2N2222AFEATURES PINNING High current (max. 800 mA)PIN DESCRIPTION Low voltage (max. 40 V).1 emitte

 0.3. 2n2222a 2n2219a.pdf Size:168K _st

2N222
2N222

2N2219A2N2222AHIGH SPEED SWITCHESPRELIMINARY DATADESCRIPTION The 2N2219A and 2N2222A are silicon PlanarEpitaxial NPN transistors in Jedec TO-39 (for2N2219A) and in Jedec TO-18 (for 2N2222A)metal case. They are designed for high speedswitching application at collector current up to500mA, and feature useful current gain over awide range of collector current, low leakage

0.4. 2n2218-2n2219-2n2221-2n2222.pdf Size:71K _st

2N222
2N222

2N2218-2N22192N2221-2N2222HIGH-SPEED SWITCHESDESCRIPTIONThe 2N2218, 2N2219, 2N2221 and 2N2222 are sili-con planar epitaxial NPN transistors in JedecTO-39 (for 2N2218 and 2N2219) and in JedecTO-18 (for 2N2221 and 2N2222) metal cases. Theyare designed for high-speed switching applicationsat collector currents up to 500 mA, and feature use-ful current gain over a wide range of

 0.5. 2n2219a 2n2222a.pdf Size:166K _st

2N222
2N222

2N2219A2N2222AHIGH SPEED SWITCHESPRELIMINARY DATADESCRIPTION The 2N2219A and 2N2222A are silicon PlanarEpitaxial NPN transistors in Jedec TO-39 (for2N2219A) and in Jedec TO-18 (for 2N2222A)metal case. They are designed for high speedswitching application at collector current up to500mA, and feature useful current gain over awide range of collector current, low leakage

0.6. 2n2222ahr.pdf Size:1138K _st

2N222
2N222

2N2222AHRHi-Rel 40 V, 0.8 A NPN transistorDatasheet - production dataFeaturesParameter ESCC JANS12 BVCEO min 40 V 50 V3IC (max) 0.8 A TO-1833hFE at 10 V - 150 mA 10041122 Hermetic packagesLCC-3UB ESCC and JANS qualifiedPin 4 in UB is connected to the metallic lid. Up to 100 krad(Si) low dose rateeDescriptionFigure 1. Internal schematic

0.7. 2n2221a 2n2222a.pdf Size:116K _central

2N222
2N222

DATA SHEET2N2221A 2N2222A NPN SILICON TRANSISTOR JEDEC TO-18 CASE DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2221A, 2N2222A types are Silicon NPN Planar Epitaxial Transistors designed for small signal general purpose and switching applications. MAXIMUM RATINGS: (TA=25C) SYMBOL UNITS Collector-Base Voltage VCBO 75 VCollector-Emitter Voltage VCEO 40 VEmitter-Base Voltage

0.8. 2n2222 2n2222a to-18.pdf Size:232K _mcc

2N222
2N222

MCC2N2222Micro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112N2222APhone: (818) 701-4933Fax: (818) 701-4939Features High current (max.800mA) Low voltage (max.40V) NPN Switching Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates TransistorsRoHS Compliant. See ordering information) Maximum Ratings

0.9. p2n2222a-d.pdf Size:164K _onsemi

2N222
2N222

P2N2222AAmplifier TransistorsNPN SiliconFeatures These are Pb--Free Devices*http://onsemi.comCOLLECTOR1MAXIMUM RATINGS (TA =25C unless otherwise noted)Characteristic Symbol Value Unit2BASECollector--Emitter Voltage VCEO 40 VdcCollector--Base Voltage VCBO 75 Vdc3Emitter--Base Voltage VEBO 6.0 VdcEMITTERCollector Current -- Continuous IC 600 mAdcTotal Devi

0.10. p2n2222ag.pdf Size:165K _onsemi

2N222
2N222

P2N2222AAmplifier TransistorsNPN SiliconFeatures These are Pb--Free Devices*http://onsemi.comCOLLECTOR1MAXIMUM RATINGS (TA =25C unless otherwise noted)Characteristic Symbol Value Unit2BASECollector--Emitter Voltage VCEO 40 VdcCollector--Base Voltage VCBO 75 Vdc3Emitter--Base Voltage VEBO 6.0 VdcEMITTERCollector Current -- Continuous IC 600 mAdcTotal Devi

0.11. 2n2222aub.pdf Size:250K _optek

2N222
2N222

Product Bulletin JANTX, JANTXV, 2N2222AUBSeptember 1996Surface Mount NPN General Purpose TransistorType JANTX, JANTXV, 2N2222AUBFeature Absolute Maximum Ratings (TA = 25o C unless otherwise noted)Collector-Base Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75 VCeramic surface mount packageCollector-Emitter Voltage. . . . . . .

0.12. 2n2222aua.pdf Size:186K _optek

2N222
2N222

0.13. 2n2222ac1b.pdf Size:563K _semelab

2N222
2N222

SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N2222AC1 High Speed Saturated Switching Hermetic Surface Mounted Package. Ideally suited for High Speed Switching and General Purpose Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VCBO Collector Base Voltage 75V VCEO Collector Emitter Voltage 50V VE

0.14. 2n2222ac1a.pdf Size:563K _semelab

2N222
2N222

SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N2222AC1 High Speed Saturated Switching Hermetic Surface Mounted Package. Ideally suited for High Speed Switching and General Purpose Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VCBO Collector Base Voltage 75V VCEO Collector Emitter Voltage 50V VE

0.15. 2n2221.pdf Size:10K _semelab

2N222

2N2221Dimensions in mm (inches). Bipolar NPN Device in a 5.84 (0.230)5.31 (0.209) Hermetically sealed TO18 4.95 (0.195)4.52 (0.178)Metal Package. Bipolar NPN Device. VCEO = 30V 0.48 (0.019)0.41 (0.016)dia.IC = 0.8A 2.54 (0.100)All Semelab hermetically sealed products Nom. can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JAN

0.16. 2n2221ax.pdf Size:19K _semelab

2N222
2N222

2N2221AXMECHANICAL DATA HIGH SPEED SWITCHING BIPOLAR NPN Dimensions in mm (inches) TRANSISTOR IN A HERMETICALLY 5.84 (0.230)5.31 (0.209)SEALED TO-18 PACKAGE 4.95 (0.195)4.52 (0.178)FEATURES SILICON NPN TRANSISTOR METAL CASE (JEDEC TO-18) HIGH SPEED SWITCHING 0.48 (0.019)0.41 (0.016)dia.2.54 (0.100)Nom.APPLICATIONS: SUITABLE FOR HIGH SPEED SWITC

0.17. 2n2223a.pdf Size:18K _semelab

2N222
2N222

2N2223ASEMELABMECHANICAL DATADimensions in mm (inches)DUAL NPN TRANSISTOR 8.51 (0.335)9.40 (0.370)IN TO77 HERMETIC PACKAGE7.75 (0.305)8.51 (0.335)FEATURES1.02 Silicon Planar Epitaxial NPN Transistor(0.040)Max. High Rel and Screening Options Available.0.41 (0.016)0.53 (0.021)5.08(0.200)2.54(0.100)42.545(0.100)0.74 (0.029)3 61.14 (0.

0.18. 2n2222ac3a 2n2222ac3b 2n2222ac3c.pdf Size:86K _semelab

2N222
2N222

SILICON SWITCHING NPN TRANSISTOR 2N2222AC3A, 2N2222AC3B 2N2222AC3C High Speed Saturated Switching Hermetic LCC3 Ceramic package. Variant B to MIL-PRF-19500/255 outline Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VCBO Collector Base Voltage 75V VCEO Collector Emitter Voltage 50V VEBO Emitter Bas

0.19. 2n2221 2.pdf Size:267K _cdil

2N222
2N222

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR SWITCHING TRANSISTORS 2N22212N2222TO-18Metal Can PackageSwitching and Linear Application DC and VHF Amplifier ApplicationsABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise)DESCRIPTION SYMBOL 2N2221, 22 UNITVCEOCollector Emitter Voltage 30 VVCBOCollector

0.20. 2n2221a 22a.pdf Size:222K _cdil

2N222
2N222

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR SWITCHING TRANSISTORS 2N2221A2N2222ATO-18Switching And Linear Application DC And VHF Amplifier ApplicationsABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL 2N2221A,22A UNITCollector -Emitter Voltage VCEO 40 VCollector -Base Voltage VCBO 75 VEmitter -Base Voltage VEBO 6.0 V

0.21. p2n2222 a.pdf Size:240K _cdil

2N222
2N222

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR SWITCHING TRANSISTORS P2N2222P2N2222AEBCTO-92Complementary Silicon Transistors For Switching And Linear Applications DC Amplifier & Driver For Industrial Applications.ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified)DESCRIPTION SYMBOL 2222 2222A UNITColle

0.22. 2n2222aubc.pdf Size:138K _microsemi

2N222
2N222

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/255 DEVICES LEVELS JANSM 3K Rads (Si) 2N2221A 2N2222A JANSD 10K Rads (Si) 2N2221AL 2N2222AL JANSP 30K Rads (Si) 2N2221AUA 2N2222AUA

0.23. 2n2221aubc.pdf Size:137K _microsemi

2N222
2N222

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/255 DEVICES LEVELS 2N2221A 2N2222A JAN2N2221AL 2N2222AL JANTX2N2221AUA 2N2222AUA JANTXV2N2221AUB 2N2222AUB JANS 2N2221AUBC * 2N2222AUBC * * Available to JANS quality le

0.24. 2n2221al.pdf Size:138K _microsemi

2N222
2N222

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/255 DEVICES LEVELS JANSM 3K Rads (Si) 2N2221A 2N2222A JANSD 10K Rads (Si) 2N2221AL 2N2222AL JANSP 30K Rads (Si) 2N2221AUA 2N2222AUA

0.25. 2n2222au.pdf Size:326K _first_silicon

2N222
2N222

SEMICONDUCTOR2N2222AUTECHNICAL DATAGeneral Purpose TransistorNPN SiliconThese transistors are designed for general purpose amplifierapplications. They are housed in the SC-323/SC-70 package which 3is designed for low power surface mount applications.Features 12compliance with RoHS requirements. We declare that the material of product SC-70 / SOT 323 ORDERING INFO

0.26. 2n2222ae.pdf Size:462K _first_silicon

2N222
2N222

SEMICONDUCTOR2N2222AETECHNICAL DATAGeneral Purpose TransistorNPN SiliconThese transistors are designed for general purpose amplifier3applications. They are housed in the SC-89 package whichis designed for low power surface mount applications.1Features 2compliance with RoHS requirements. We declare that the material of product SC-89ORDERING INFORMATIONCOLLECTOR

0.27. 2n2222as.pdf Size:446K _first_silicon

2N222
2N222

SEMICONDUCTOR2N2222ASTECHNICAL DATAGeneral Purpose TransistorNPN Silicon3compliance with RoHS requirements. We declare that the material of product 21ORDERING INFORMATION SOT23Device Maring Shipping 2N2222AS 1P 3000 / Tape & ReelCOLLECTOR31MAXIMUM RATINGS (TA = 25C)BASERating Symbol Max Unit2Collector-Emitter Voltage VCEO 40 VdcEMITTERCol

0.28. 2n2221a 2n2221al 2n2221aua 2n2221aub 2n2222a 2n2222al 2n2222aua 2n2222aub.pdf Size:377K _aeroflex

2N222
2N222

Radiation Hardened NPN Silicon Switching Transistors2N2221A, 2N2221AL, 2N2221AUA, 2N2221AUB2N2222A, 2N2222AL, 2N2222AUA, 2N2222AUBFeatures Qualified to MIL-PRF-19500/255 Levels: CommericalJANSJANSM-3K Rads (Si) JANSD-l0K Rads (Si) JANSP-30K Rads (Si) JANSL-50K Rads (Si) JANSR-l00K Rads (Si) TO-18 (TO-206AA), Surface mount UA & UB PackagesAbsolute Maximum Ra

Datasheet: 2N2218AS , 2N2218S , 2N2219 , 2N2219A , 2N2219AL , 2N2219AQF , 2N2219AS , 2N2219S , BC109C , 2N2220 , 2N2220A , 2N2221 , 2N2221A , 2N2221ACSM , 2N2221ADCSM , 2N2221CSM , 2N2221DCSM .

 

 
Back to Top