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2N222 Specs and Replacement


   Type Designator: 2N222
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.07 W
   Maximum Collector-Base Voltage |Vcb|: 15 V
   Maximum Collector-Emitter Voltage |Vce|: 12 V
   Maximum Collector Current |Ic max|: 0.07 A
   Max. Operating Junction Temperature (Tj): 85 °C
   Transition Frequency (ft): 0.4 MHz
   Collector Capacitance (Cc): 70 pF
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO1
 

 2N222 Substitution

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2N222 detailed specifications

 0.1. Size:238K  motorola
mtp2n2222a p2n2222a.pdf pdf_icon

2N222

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by P2N2222A/D Amplifier Transistors NPN Silicon P2N2222A COLLECTOR 1 2 BASE 3 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit 1 2 Collector Emitter Voltage VCEO 40 Vdc 3 Collector Base Voltage VCBO 75 Vdc CASE 29 04, STYLE 17 Emitter Base Voltage VEBO 6.0 Vdc TO 92 (TO 226AA) Collector Current Conti... See More ⇒

 0.2. Size:53K  philips
2n2222 2n2222a cnv 2.pdf pdf_icon

2N222

DISCRETE SEMICONDUCTORS DATA SHEET M3D125 2N2222; 2N2222A NPN switching transistors 1997 May 29 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN switching transistors 2N2222; 2N2222A FEATURES PINNING High current (max. 800 mA) PIN DESCRIPTION Low voltage (max. 40 V). 1 emitte... See More ⇒

 0.3. Size:1138K  st
2n2222ahr.pdf pdf_icon

2N222

2N2222AHR Hi-Rel 40 V, 0.8 A NPN transistor Datasheet - production data Features Parameter ESCC JANS 1 2 BVCEO min 40 V 50 V 3 IC (max) 0.8 A TO-18 3 3 hFE at 10 V - 150 mA 100 4 1 1 2 2 Hermetic packages LCC-3 UB ESCC and JANS qualified Pin 4 in UB is connected to the metallic lid. Up to 100 krad(Si) low dose ratee Description Figure 1. Internal schematic ... See More ⇒

 0.4. Size:166K  st
2n2219a 2n2222a.pdf pdf_icon

2N222

2N2219A 2N2222A HIGH SPEED SWITCHES PRELIMINARY DATA DESCRIPTION The 2N2219A and 2N2222A are silicon Planar Epitaxial NPN transistors in Jedec TO-39 (for 2N2219A) and in Jedec TO-18 (for 2N2222A) metal case. They are designed for high speed switching application at collector current up to 500mA, and feature useful current gain over a wide range of collector current, low leakage ... See More ⇒

Detailed specifications: 2N2218AS , 2N2218S , 2N2219 , 2N2219A , 2N2219AL , 2N2219AQF , 2N2219AS , 2N2219S , A1013 , 2N2220 , 2N2220A , 2N2221 , 2N2221A , 2N2221ACSM , 2N2221ADCSM , 2N2221CSM , 2N2221DCSM .

Keywords - 2N222 transistor specs

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