All Transistors. 2N222 Datasheet

 

2N222 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2N222

Material of Transistor: Ge

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 0.07 W

Maximum Collector-Base Voltage |Vcb|: 15 V

Maximum Collector-Emitter Voltage |Vce|: 12 V

Maximum Collector Current |Ic max|: 0.07 A

Max. Operating Junction Temperature (Tj): 85 °C

Transition Frequency (ft): 0.4 MHz

Collector Capacitance (Cc): 70 pF

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO1

2N222 Transistor Equivalent Substitute - Cross-Reference Search

 

2N222 Datasheet (PDF)

1.1. 2n2222ac1b.pdf Size:563K _upd

2N222
2N222

SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N2222AC1 • High Speed Saturated Switching • Hermetic Surface Mounted Package. • Ideally suited for High Speed Switching and General Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO Collector – Base Voltage 75V VCEO Collector – Emitter Voltage 50V VE

1.2. 2n2222ahr.pdf Size:1138K _upd

2N222
2N222

2N2222AHR Hi-Rel 40 V, 0.8 A NPN transistor Datasheet - production data Features Parameter ESCC JANS 1 2 BVCEO min 40 V 50 V 3 IC (max) 0.8 A TO-18 3 3 hFE at 10 V - 150 mA 100 4 1 1 2 2 • Hermetic packages LCC-3 UB • ESCC and JANS qualified Pin 4 in UB is connected to the metallic lid. • Up to 100 krad(Si) low dose ratee Description Figure 1. Internal schematic

 1.3. 2n2222ac1a.pdf Size:563K _upd

2N222
2N222

SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N2222AC1 • High Speed Saturated Switching • Hermetic Surface Mounted Package. • Ideally suited for High Speed Switching and General Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO Collector – Base Voltage 75V VCEO Collector – Emitter Voltage 50V VE

1.4. p2n2222ag.pdf Size:165K _upd

2N222
2N222

P2N2222A Amplifier Transistors NPN Silicon Features • These are Pb--Free Devices* http://onsemi.com COLLECTOR 1 MAXIMUM RATINGS (TA =25°C unless otherwise noted) Characteristic Symbol Value Unit 2 BASE Collector--Emitter Voltage VCEO 40 Vdc Collector--Base Voltage VCBO 75 Vdc 3 Emitter--Base Voltage VEBO 6.0 Vdc EMITTER Collector Current -- Continuous IC 600 mAdc Total Devi

 1.5. 2n2222ac3b.pdf Size:86K _upd

2N222
2N222

SILICON SWITCHING NPN TRANSISTOR 2N2222AC3A, 2N2222AC3B 2N2222AC3C • High Speed Saturated Switching • Hermetic LCC3 Ceramic package. • Variant B to MIL-PRF-19500/255 outline • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO Collector – Base Voltage 75V VCEO Collector – Emitter Voltage 50V VEBO Emitter – Bas

1.6. 2n2221aubc.pdf Size:137K _upd

2N222
2N222

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/255 DEVICES LEVELS 2N2221A 2N2222A JAN 2N2221AL 2N2222AL JANTX 2N2221AUA 2N2222AUA JANTXV 2N2221AUB 2N2222AUB JANS 2N2221AUBC * 2N2222AUBC * * Available to JANS quality le

1.7. 2n2222ac3a.pdf Size:86K _upd

2N222
2N222

SILICON SWITCHING NPN TRANSISTOR 2N2222AC3A, 2N2222AC3B 2N2222AC3C • High Speed Saturated Switching • Hermetic LCC3 Ceramic package. • Variant B to MIL-PRF-19500/255 outline • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO Collector – Base Voltage 75V VCEO Collector – Emitter Voltage 50V VEBO Emitter – Bas

1.8. 2n2222aubc.pdf Size:138K _upd

2N222
2N222

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/255 DEVICES LEVELS JANSM – 3K Rads (Si) 2N2221A 2N2222A JANSD – 10K Rads (Si) 2N2221AL 2N2222AL JANSP – 30K Rads (Si) 2N2221AUA 2N2222AUA

1.9. 2n2221ax.pdf Size:19K _upd

2N222
2N222

2N2221AX MECHANICAL DATA HIGH SPEED SWITCHING BIPOLAR NPN Dimensions in mm (inches) TRANSISTOR IN A HERMETICALLY 5.84 (0.230) 5.31 (0.209) SEALED TO-18 PACKAGE 4.95 (0.195) 4.52 (0.178) FEATURES • SILICON NPN TRANSISTOR • METAL CASE (JEDEC TO-18) • HIGH SPEED SWITCHING 0.48 (0.019) 0.41 (0.016) dia. 2.54 (0.100) Nom. APPLICATIONS: SUITABLE FOR HIGH SPEED SWITC

1.10. 2n2222ac3c.pdf Size:86K _upd

2N222
2N222

SILICON SWITCHING NPN TRANSISTOR 2N2222AC3A, 2N2222AC3B 2N2222AC3C • High Speed Saturated Switching • Hermetic LCC3 Ceramic package. • Variant B to MIL-PRF-19500/255 outline • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO Collector – Base Voltage 75V VCEO Collector – Emitter Voltage 50V VEBO Emitter – Bas

1.11. 2n2221al.pdf Size:138K _upd

2N222
2N222

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/255 DEVICES LEVELS JANSM – 3K Rads (Si) 2N2221A 2N2222A JANSD – 10K Rads (Si) 2N2221AL 2N2222AL JANSP – 30K Rads (Si) 2N2221AUA 2N2222AUA

1.12. mtp2n2222a.pdf Size:238K _motorola

2N222
2N222

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by P2N2222A/D Amplifier Transistors NPN Silicon P2N2222A COLLECTOR 1 2 BASE 3 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit 1 2 CollectorEmitter Voltage VCEO 40 Vdc 3 CollectorBase Voltage VCBO 75 Vdc CASE 2904, STYLE 17 EmitterBase Voltage VEBO 6.0 Vdc TO92 (TO226AA) Collector Current Continuous IC 600 mAdc

1.13. p2n2222a.pdf Size:238K _motorola

2N222
2N222

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by P2N2222A/D Amplifier Transistors NPN Silicon P2N2222A COLLECTOR 1 2 BASE 3 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit 1 2 CollectorEmitter Voltage VCEO 40 Vdc 3 CollectorBase Voltage VCBO 75 Vdc CASE 2904, STYLE 17 EmitterBase Voltage VEBO 6.0 Vdc TO92 (TO226AA) Collector Current Continuous IC 600 mAdc

1.14. 2n2222 2n2222a cnv 2.pdf Size:53K _philips

2N222
2N222

DISCRETE SEMICONDUCTORS DATA SHEET M3D125 2N2222; 2N2222A NPN switching transistors 1997 May 29 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN switching transistors 2N2222; 2N2222A FEATURES PINNING High current (max. 800 mA) PIN DESCRIPTION Low voltage (max. 40 V). 1 emitter 2 ba

1.15. 2n2218-2n2219-2n2221-2n2222.pdf Size:71K _st

2N222
2N222

2N2218-2N2219 2N2221-2N2222 HIGH-SPEED SWITCHES DESCRIPTION The 2N2218, 2N2219, 2N2221 and 2N2222 are sili- con planar epitaxial NPN transistors in Jedec TO-39 (for 2N2218 and 2N2219) and in Jedec TO-18 (for 2N2221 and 2N2222) metal cases. They are designed for high-speed switching applications at collector currents up to 500 mA, and feature use- ful current gain over a wide range of col

1.16. 2n2219a 2n2222a.pdf Size:166K _st

2N222
2N222

2N2219A 2N2222A HIGH SPEED SWITCHES PRELIMINARY DATA DESCRIPTION The 2N2219A and 2N2222A are silicon Planar Epitaxial NPN transistors in Jedec TO-39 (for 2N2219A) and in Jedec TO-18 (for 2N2222A) metal case. They are designed for high speed switching application at collector current up to 500mA, and feature useful current gain over a wide range of collector current, low leakage cur

1.17. 2n2222a 2n2219a.pdf Size:168K _st

2N222
2N222

2N2219A 2N2222A HIGH SPEED SWITCHES PRELIMINARY DATA DESCRIPTION The 2N2219A and 2N2222A are silicon Planar Epitaxial NPN transistors in Jedec TO-39 (for 2N2219A) and in Jedec TO-18 (for 2N2222A) metal case. They are designed for high speed switching application at collector current up to 500mA, and feature useful current gain over a wide range of collector current, low leakage cur

1.18. 2n2221a 2n2222a.pdf Size:116K _central

2N222
2N222

DATA SHEET 2N2221A 2N2222A NPN SILICON TRANSISTOR JEDEC TO-18 CASE DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2221A, 2N2222A types are Silicon NPN Planar Epitaxial Transistors designed for small signal general purpose and switching applications. MAXIMUM RATINGS: (TA=25C) SYMBOL UNITS Collector-Base Voltage VCBO 75 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO

1.19. 2n2222 2n2222a(to-18).pdf Size:232K _mcc

2N222
2N222

MCC 2N2222 Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2N2222A Phone: (818) 701-4933 Fax: (818) 701-4939 Features High current (max.800mA) Low voltage (max.40V) NPN Switching Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates Transistors RoHS Compliant. See ordering information) Maximum Ratings Symbol Ra

1.20. p2n2222a-d.pdf Size:164K _onsemi

2N222
2N222

P2N2222A Amplifier Transistors NPN Silicon Features These are Pb--Free Devices* http://onsemi.com COLLECTOR 1 MAXIMUM RATINGS (TA =25C unless otherwise noted) Characteristic Symbol Value Unit 2 BASE Collector--Emitter Voltage VCEO 40 Vdc Collector--Base Voltage VCBO 75 Vdc 3 Emitter--Base Voltage VEBO 6.0 Vdc EMITTER Collector Current -- Continuous IC 600 mAdc Total Device Dis

1.21. 2n2222aub.pdf Size:250K _optek

2N222
2N222

Product Bulletin JANTX, JANTXV, 2N2222AUB September 1996 Surface Mount NPN General Purpose Transistor Type JANTX, JANTXV, 2N2222AUB Feature Absolute Maximum Ratings (TA = 25o C unless otherwise noted) Collector-Base Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75 V Ceramic surface mount package Collector-Emitter Voltage. . . . . . . . .

1.22. 2n2222aua.pdf Size:186K _optek

2N222
2N222

1.23. 2n2221.pdf Size:10K _semelab

2N222

2N2221 Dimensions in mm (inches). Bipolar NPN Device in a 5.84 (0.230) 5.31 (0.209) Hermetically sealed TO18 4.95 (0.195) 4.52 (0.178) Metal Package. Bipolar NPN Device. VCEO = 30V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.8A 2.54 (0.100) All Semelab hermetically sealed products Nom. can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV

1.24. 2n2223a.pdf Size:18K _semelab

2N222
2N222

2N2223A SEME LAB MECHANICAL DATA Dimensions in mm (inches) DUAL NPN TRANSISTOR 8.51 (0.335) 9.40 (0.370) IN TO77 HERMETIC PACKAGE 7.75 (0.305) 8.51 (0.335) FEATURES 1.02 Silicon Planar Epitaxial NPN Transistor (0.040) Max. High Rel and Screening Options Available. 0.41 (0.016) 0.53 (0.021) 5.08 (0.200) 2.54 (0.100) 4 2.54 5 (0.100) 0.74 (0.029) 3 6 1.14 (0.045) 2

1.25. 2n2221 2.pdf Size:267K _cdil

2N222
2N222

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR SWITCHING TRANSISTORS 2N2221 2N2222 TO-18 Metal Can Package Switching and Linear Application DC and VHF Amplifier Applications ABSOLUTE MAXIMUM RATINGS (Ta=25?C unless specified otherwise) DESCRIPTION SYMBOL 2N2221, 22 UNIT VCEO Collector Emitter Voltage 30 V VCBO Collector Bas

1.26. p2n2222 a.pdf Size:240K _cdil

2N222
2N222

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR SWITCHING TRANSISTORS P2N2222 P2N2222A EBC TO-92 Complementary Silicon Transistors For Switching And Linear Applications DC Amplifier & Driver For Industrial Applications. ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified) DESCRIPTION SYMBOL 2222 2222A UNIT Collecto

1.27. 2n2221a 22a.pdf Size:222K _cdil

2N222
2N222

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR SWITCHING TRANSISTORS 2N2221A 2N2222A TO-18 Switching And Linear Application DC And VHF Amplifier Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL 2N2221A,22A UNIT Collector -Emitter Voltage VCEO 40 V Collector -Base Voltage VCBO 75 V Emitter -Base Voltage VEBO 6.0 V Col

1.28. 2n2222au.pdf Size:326K _first_silicon

2N222
2N222

SEMICONDUCTOR 2N2222AU TECHNICAL DATA General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SC-323/SC-70 package which 3 is designed for low power surface mount applications. Features 1 2 compliance with RoHS requirements. • We declare that the material of product SC-70 / SOT– 323 ORDERING INFO

1.29. 2n2222ae.pdf Size:462K _first_silicon

2N222
2N222

SEMICONDUCTOR 2N2222AE TECHNICAL DATA General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier 3 applications. They are housed in the SC-89 package which is designed for low power surface mount applications. 1 Features 2 compliance with RoHS requirements. • We declare that the material of product SC-89 ORDERING INFORMATION COLLECTOR

1.30. 2n2222as.pdf Size:446K _first_silicon

2N222
2N222

SEMICONDUCTOR 2N2222AS TECHNICAL DATA General Purpose Transistor NPN Silicon 3 compliance with RoHS requirements. • We declare that the material of product 2 1 ORDERING INFORMATION † SOT–23 Device Maring Shipping 2N2222AS 1P 3000 / Tape & Reel COLLECTOR 3 1 MAXIMUM RATINGS (TA = 25°C) BASE Rating Symbol Max Unit 2 Collector-Emitter Voltage VCEO 40 Vdc EMITTER Col

1.31. 2n2221a 2n2221al 2n2221aua 2n2221aub 2n2222a 2n2222al 2n2222aua 2n2222aub.pdf Size:377K _aeroflex

2N222
2N222

Radiation Hardened NPN Silicon Switching Transistors 2N2221A, 2N2221AL, 2N2221AUA, 2N2221AUB 2N2222A, 2N2222AL, 2N2222AUA, 2N2222AUB Features • Qualified to MIL-PRF-19500/255 • Levels: Commerical JANS JANSM-3K Rads (Si) JANSD-l0K Rads (Si) JANSP-30K Rads (Si) JANSL-50K Rads (Si) JANSR-l00K Rads (Si) • TO-18 (TO-206AA), Surface mount UA & UB Packages Absolute Maximum Ra

Datasheet: 2N2218AS , 2N2218S , 2N2219 , 2N2219A , 2N2219AL , 2N2219AQF , 2N2219AS , 2N2219S , BC109C , 2N2220 , 2N2220A , 2N2221 , 2N2221A , 2N2221ACSM , 2N2221ADCSM , 2N2221CSM , 2N2221DCSM .

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