2SD1133D Specs and Replacement
Type Designator: 2SD1133D
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 70 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 160
Package: TO220
2SD1133D Substitution
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2SD1133D datasheet
To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM... See More ⇒
2SD1133, 2SD1134 Silicon NPN Triple Diffused Application Low frequency power amplifier complementary pair with 2SB857 and 2SB858 Outline TO-220AB 1. Base 2. Collector (Flange) 1 3. Emitter 2 3 Absolute Maximum Ratings (Ta = 25 C) Ratings Item Symbol 2SD1133 2SD1134 Unit Collector to base voltage VCBO 70 70 V Collector to emitter voltage VCEO 50 60 V Emitter to base voltage VE... See More ⇒
isc Silicon NPN Power Transistor 2SD1133 DESCRIPTION Collector Current I = 4A C Low Collector Saturation Voltage V = 1.0V(Max)@I = 2A CE(sat) C High Collector Power Dissipation Complement to Type 2SB857 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXI... See More ⇒
Detailed specifications: 2SD1129 , 2SD113 , 2SD1130 , 2SD1131 , 2SD1132 , 2SD1133 , 2SD1133B , 2SD1133C , 2SC4793 , 2SD1134 , 2SD1134B , 2SD1134C , 2SD1134D , 2SD1135 , 2SD1135B , 2SD1135C , 2SD1136 .
History: 40361V2 | 2SD1129 | 2N5939 | 2SD1134D | 2STP535FP
Keywords - 2SD1133D pdf specs
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History: 40361V2 | 2SD1129 | 2N5939 | 2SD1134D | 2STP535FP
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