2SD1157 Datasheet and Replacement
Type Designator: 2SD1157
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 25 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 400
Noise Figure, dB: -
Package: TO220
2SD1157 Substitution
2SD1157 Datasheet (PDF)
2sd1157.pdf

Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com
2sd1157.pdf

isc Silicon NPN Power Transistor 2SD1157DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOHigh DC Current Gain-: h = 250V(Min.) @I = 0.5AFE CLow Collector Saturation VoltageHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsDC-DC converterSolid sate relay
2sd1153.pdf

Ordering number:828DPNP/NPN Epitaxial Planar Silicon Darlington Tranasistors2SB865/2SD1153Drivers ApplicationsApplications Package Dimensions Relay drivers, hammer drivers, lamp drivers, motorunit:mmdrivers.2006A[2SB865/2SD1153]Features High DC current gain (4000 or more). Large current capacity and wide ASO. Low saturation voltage.EIAJ : SC-51 B : Base
2sd1159.pdf

Ordering number:EN837ENPN Triple Diffused Planar Silicon Transistor2SD1159TV Horizontal Deflection Output,High-Current Switching ApplicationsFeatures Package Dimensions Capable of efficient drive with small internal loss dueunit:mmto excellent tf.2010C[2SD1159]10.24.53.65.11.31.21 : Base0.80.42 : Collector1 2 33 : EmitterJEDEC : TO-220AB2.55 2.
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , TIP42C , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
Keywords - 2SD1157 transistor datasheet
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