2SD1158 PDF and Equivalents Search

 ..1. Size:126K  fuji

 2sd1158.pdf

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 ..2. Size:209K  inchange semiconductor

 2sd1158.pdf

isc Silicon NPN Power Transistor 2SD1158 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 50V(Min) (BR)CEO High DC Current Gain- h = 250V(Min.) @I = 1A FE C Low Collector Saturation Voltage High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operati APPLICATIONS Switching regulators DC-DC converter Solid sate relay ... See More ⇒

 8.1. Size:83K  sanyo

 2sd1153.pdf

Ordering number 828D PNP/NPN Epitaxial Planar Silicon Darlington Tranasistors 2SB865/2SD1153 Drivers Applications Applications Package Dimensions Relay drivers, hammer drivers, lamp drivers, motor unit mm drivers. 2006A [2SB865/2SD1153] Features High DC current gain (4000 or more). Large current capacity and wide ASO. Low saturation voltage. EIAJ SC-51 B Base ... See More ⇒

 8.2. Size:77K  sanyo

 2sd1159.pdf

Ordering number EN837E NPN Triple Diffused Planar Silicon Transistor 2SD1159 TV Horizontal Deflection Output, High-Current Switching Applications Features Package Dimensions Capable of efficient drive with small internal loss due unit mm to excellent tf. 2010C [2SD1159] 10.2 4.5 3.6 5.1 1.3 1.2 1 Base 0.8 0.4 2 Collector 1 2 3 3 Emitter JEDEC TO-220AB 2.55 2.... See More ⇒

 8.3. Size:97K  fuji

 2sd1157.pdf

Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com ... See More ⇒

 8.4. Size:209K  inchange semiconductor

 2sd1157.pdf

isc Silicon NPN Power Transistor 2SD1157 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 50V(Min) (BR)CEO High DC Current Gain- h = 250V(Min.) @I = 0.5A FE C Low Collector Saturation Voltage High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators DC-DC converter Solid sate relay... See More ⇒

 8.5. Size:207K  inchange semiconductor

 2sd1159.pdf

isc Silicon NPN Power Transistor 2SD1159 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 1.0V(Max) @I = 4A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV horizontal deflection output, high-current switching applications. ABSOLUTE... See More ⇒

 8.6. Size:207K  inchange semiconductor

 2sd1154.pdf

isc Silicon NPN Power Transistor 2SD1154 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 200V (Min) (BR)CEO Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output for B/W TV set. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER MAX UNIT V Collector-Base... See More ⇒