All Transistors. 2SD1170 Datasheet


2SD1170 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SD1170

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 70 W

Maximum Collector-Base Voltage |Vcb|: 120 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 175 °C

Forward Current Transfer Ratio (hFE), MIN: 4000

Noise Figure, dB: -

Package: TO220

2SD1170 Transistor Equivalent Substitute - Cross-Reference Search


2SD1170 Datasheet (PDF)

1.1. 2sd1170.pdf Size:229K _inchange_semiconductor


INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1170 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·High DC Current Gain- : hFE= 2000( Min.) @(IC= 3A, VCE= 2V) ·Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max)@ (IC= 3A, IBB= 3mA) APPLICATIONS ·Driver for solenoid,motor and general purpose appli

4.1. 2sd1175.pdf Size:69K _wingshing


NPN TRIPLE DIFFUSED 2SD1175 PLANAR SILICON TRANSISTOR COLOR TV HORIZONTAL OUTPUT APPLICATIONS (Damper Diode BUILT IN) High Collector-Base Voltage(VCBO=1500V) TO-3 High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25? ?) ? ? A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 1500 V Emitter-Base voltage VEBO 6 V Collector Curre

4.2. 2sd1175.pdf Size:116K _inchange_semiconductor


Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1175 DESCRIPTION Ў¤ With TO-3 package Ў¤ Built-in damper diode Ў¤ High voltage ,high power dissipation Ў¤ Wide area of safe operation APPLICATIONS Ў¤ Line-operated horizontal deflection output applications PINNING(see fig.2) PIN 1 2 3 Base Emitter DESCRIPTION Absolute maximum ratings(Ta=Ўж )

Datasheet: 2SC628 , 2SC629 , 2SC63 , 2SC631 , 2SC631A , 2SC631AS , 2SC632 , 2SC632A , BC547C , 2SC633A , 2SC634 , 2SC634A , 2SC635 , 2SC636 , 2SC637 , 2SC638 , 2SC639 .


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