2SD118 Datasheet and Replacement

   Type Designator: 2SD118
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 100 W
   Maximum Collector-Base Voltage |Vcb|: 130 V
   Maximum Collector-Emitter Voltage |Vce|: 110 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 7 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: TO3

2SD118 Substitution

- BJT ⓘ Cross-Reference Search

2SD118 Datasheet (PDF)

0.1. Size:505K 1
2sd1766 2sd1758 2sd1862 2sd1189f 2sd1055 2sd1919 2sd1227m.pdf pdf_icon

0.2. Size:227K toshiba
2sd1187.pdf pdf_icon

0.3. Size:135K rohm
2sd1189.pdf pdf_icon

0.4. Size:56K no
2sd1185.pdf pdf_icon

0.5. Size:202K inchange semiconductor
2sd1186.pdf pdf_icon

isc Silicon NPN Power Transistor 2SD1186DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500 VCBOV Collector-Emitte

0.6. Size:183K inchange semiconductor
2sd1180.pdf pdf_icon

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1180DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 110V (Min)(BR)CEOLow collector saturation voltageWith TO-126 packageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in audio and radio frequency power amplifiersapplications.ABSOL

0.7. Size:198K inchange semiconductor
2sd1184.pdf pdf_icon

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1184DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh ReliabilityWide area of safe operationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

0.8. Size:199K inchange semiconductor
2sd1187.pdf pdf_icon

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1187DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOGood Linearity of hFECollector-Emitter Saturation Voltage-: V = 0.5V(Max.)@ I = 6.0ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh power switching applicationsDC-DC

0.9. Size:202K inchange semiconductor
2sd1185.pdf pdf_icon

isc Silicon NPN Power Transistor 2SD1185DESCRIPTIONHigh Breakdown Voltage-: V = 1200V (Min)CBOHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1200 VCBOV Collector-Emitte

0.10. Size:198K inchange semiconductor
2sd1183.pdf pdf_icon

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1183DESCRIPTIONHigh Breakdown Voltage-: V = 1200V (Min)CBOHigh ReliabilityWide area of safe operationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N5401 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

Keywords - 2SD118 transistor datasheet

2SD118 cross reference
2SD118 equivalent finder
2SD118 lookup
2SD118 substitution
2SD118 replacement

LIST

Last Update

BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550

All Transistors. 2SD118 Datasheet

2SD118 Datasheet and Replacement

2SD118 Datasheet (PDF)

Keywords - 2SD118 transistor datasheet

LIST

Last Update

Popular searches

AllTransistors(C)