2SD1188 Datasheet and Replacement

   Type Designator: 2SD1188
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 5 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector Current |Ic max|: 2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: TO247

2SD1188 Substitution

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2SD1188 Datasheet (PDF)

8.1. Size:505K 1
2sd1766 2sd1758 2sd1862 2sd1189f 2sd1055 2sd1919 2sd1227m.pdf pdf_icon

8.2. Size:227K toshiba
2sd1187.pdf pdf_icon

8.3. Size:135K rohm
2sd1189.pdf pdf_icon

8.4. Size:56K no
2sd1185.pdf pdf_icon

8.5. Size:202K inchange semiconductor
2sd1186.pdf pdf_icon

isc Silicon NPN Power Transistor 2SD1186DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500 VCBOV Collector-Emitte

8.6. Size:183K inchange semiconductor
2sd1180.pdf pdf_icon

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1180DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 110V (Min)(BR)CEOLow collector saturation voltageWith TO-126 packageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in audio and radio frequency power amplifiersapplications.ABSOL

8.7. Size:198K inchange semiconductor
2sd1184.pdf pdf_icon

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1184DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh ReliabilityWide area of safe operationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

8.8. Size:199K inchange semiconductor
2sd1187.pdf pdf_icon

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1187DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOGood Linearity of hFECollector-Emitter Saturation Voltage-: V = 0.5V(Max.)@ I = 6.0ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh power switching applicationsDC-DC

8.9. Size:202K inchange semiconductor
2sd1185.pdf pdf_icon

isc Silicon NPN Power Transistor 2SD1185DESCRIPTIONHigh Breakdown Voltage-: V = 1200V (Min)CBOHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1200 VCBOV Collector-Emitte

8.10. Size:198K inchange semiconductor
2sd1183.pdf pdf_icon

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1183DESCRIPTIONHigh Breakdown Voltage-: V = 1200V (Min)CBOHigh ReliabilityWide area of safe operationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

Datasheet: 2SD1182 , 2SD1183 , 2SD1184 , 2SD1185 , 2SD1186 , 2SD1187 , 2SD1187O , 2SD1187Y , A1941 , 2SD1189 , 2SD119 , 2SD1190 , 2SD1191 , 2SD1192 , 2SD1193 , 2SD1194 , 2SD1195 .