2SD1209 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SD1209
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.9 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 4000
Noise Figure, dB: -
Package: TO92
2SD1209 Transistor Equivalent Substitute - Cross-Reference Search
2SD1209 Datasheet (PDF)
1.1. 2sd1209.pdf 
Size:31K _hitachi
2SD1209(K) Silicon NPN Epitaxial, Darlington Application Low frequency power amplifier Complementary pair with 2SA1193(K) Outline TO-92MOD 2 3 1. Emitter 2. Collector 3. Base 1 3 2 1 2SD1209(K) Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 60 V Emitter to base voltage VEBO 7V Collector
4.1. 2sd1207.pdf Size:51K _sanyo
Ordering number : EN930D 2SB892 / 2SD1207 SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SB892 / 2SD1207 Large-Current Switching Applications Applications Power supplies, relay drivers, lamp drivers, and automotive wiring. Features FBET and MBIT processed (Original process of SANYO). Low saturation voltage. Large current capacity and wide ASO.
4.2. 2sd1200.pdf Size:42K _rohm
2SB1189 / 2SB1238 / 2SB899F Transistors Transistors 2SD1767 / 2SD1859 / 2SD1200F (96-618-B13) (96-750-D13) 278
4.3. 2sd1205.pdf Size:51K _panasonic
Transistor 2SD1205, 2SD1205A Silicon NPN epitaxial planer type darlington Unit: mm For low-frequency amplification 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 Forward current transfer ratio hFE is designed high, which is ap- propriate to the driver circuit of motors and printer bammer: hFE = 4000 to 2000. A shunt resistor is omitted from the driver. 0.85 M type package allowing
4.4. 2sd1205 e.pdf Size:56K _panasonic
Transistor 2SD1205, 2SD1205A Silicon NPN epitaxial planer type darlington Unit: mm For low-frequency amplification 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 Forward current transfer ratio hFE is designed high, which is ap- propriate to the driver circuit of motors and printer bammer: hFE = 4000 to 2000. A shunt resistor is omitted from the driver. 0.85 M type package allowing
4.5. 2sd1208.pdf Size:114K _inchange_semiconductor
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1208 DESCRIPTION Ў¤ With TO-3 package Ў¤ Wide area of safe operation Ў¤ High DC current gain Ў¤ Darlington APPLICATIONS Ў¤ Power regulator for line operated TV PINNING PIN 1 2 3 Base Emitter DESCRIPTION Absolute maximum ratings (Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICP PC Tj Tstg PARAMETER
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , 431 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
