2SD1209 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SD1209
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.9 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 4000
Package: TO92
2SD1209 Transistor Equivalent Substitute - Cross-Reference Search
2SD1209 Datasheet (PDF)
0.1. 2sd1209.pdf 
Size:31K _hitachi
2SD1209(K)Silicon NPN Epitaxial, DarlingtonApplication Low frequency power amplifier Complementary pair with 2SA1193(K)OutlineTO-92MOD231. Emitter2. Collector3. Base13212SD1209(K)Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 60 VCollector to emitter voltage VCEO 60 VEmitter to base voltage VEBO 7VCo
8.1. 2sd1207.pdf Size:51K _sanyo
Ordering number : EN930D2SB892 / 2SD1207SANYO SemiconductorsDATA SHEETPNP / NPN Epitaxial Planar Silicon Transistors2SB892 / 2SD1207Large-Current Switching ApplicationsApplications Power supplies, relay drivers, lamp drivers, and automotive wiring.Features FBET and MBIT processed (Original process of SANYO). Low saturation voltage. Large current capacity and
8.2. 2sd1200.pdf Size:42K _rohm
2SB1189 / 2SB1238 / 2SB899FTransistorsTransistors2SD1767 / 2SD1859 / 2SD1200F(96-618-B13)(96-750-D13)278
8.3. 2sd1205.pdf Size:51K _panasonic
Transistor2SD1205, 2SD1205ASilicon NPN epitaxial planer type darlingtonUnit: mmFor low-frequency amplification6.9 0.1 2.5 0.11.51.5 R0.9 1.0FeaturesR0.9Forward current transfer ratio hFE is designed high, which is ap-propriate to the driver circuit of motors and printer bammer: hFE= 4000 to 2000.A shunt resistor is omitted from the driver.0.85M type package all
8.4. 2sd1205 e.pdf Size:56K _panasonic
Transistor2SD1205, 2SD1205ASilicon NPN epitaxial planer type darlingtonUnit: mmFor low-frequency amplification6.9 0.1 2.5 0.11.51.5 R0.9 1.0FeaturesR0.9Forward current transfer ratio hFE is designed high, which is ap-propriate to the driver circuit of motors and printer bammer: hFE= 4000 to 2000.A shunt resistor is omitted from the driver.0.85M type package all
8.5. 2sd1208.pdf Size:114K _inchange_semiconductor
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1208 DESCRIPTION With TO-3 package Wide area of safe operation High DC current gain Darlington APPLICATIONS Power regulator for line operated TV PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings (Ta=25) SY
8.6. 2sd1204.pdf Size:185K _inchange_semiconductor
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1204DESCRIPTIONLow Collector Saturation VoltageHigh DC Current Gain100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh ruggedness electronic ignitionsHigh voltage ignition coil driverGeneral purpose power amplifiersABSOLUTE
8.7. 2sd1202.pdf Size:183K _inchange_semiconductor
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1202DESCRIPTIONLow Collector Saturation VoltageHigh DC Current Gain100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh ruggedness electronic ignitionsHigh voltage ignition coil driverGeneral purpose power amplifiersABSOLUTE
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
