All Transistors. 2SD1209 Datasheet

 

2SD1209 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SD1209

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.9 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 150 °C

Forward Current Transfer Ratio (hFE), MIN: 4000

Noise Figure, dB: -

Package: TO92

2SD1209 Transistor Equivalent Substitute - Cross-Reference Search

 

2SD1209 Datasheet (PDF)

1.1. 2sd1209.pdf Size:31K _hitachi

2SD1209
2SD1209

2SD1209(K) Silicon NPN Epitaxial, Darlington Application • Low frequency power amplifier • Complementary pair with 2SA1193(K) Outline TO-92MOD 2 3 1. Emitter 2. Collector 3. Base 1 3 2 1 2SD1209(K) Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 60 V Emitter to base voltage VEBO 7V Co

4.1. 2sd1207.pdf Size:51K _sanyo

2SD1209
2SD1209

Ordering number : EN930D 2SB892 / 2SD1207 SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SB892 / 2SD1207 Large-Current Switching Applications Applications • Power supplies, relay drivers, lamp drivers, and automotive wiring. Features • FBET and MBIT processed (Original process of SANYO). • Low saturation voltage. • Large current capacity and

4.2. 2sd1200.pdf Size:42K _rohm

2SD1209

2SB1189 / 2SB1238 / 2SB899F Transistors Transistors 2SD1767 / 2SD1859 / 2SD1200F (96-618-B13) (96-750-D13) 278

 4.3. 2sd1205.pdf Size:51K _panasonic

2SD1209
2SD1209

Transistor 2SD1205, 2SD1205A Silicon NPN epitaxial planer type darlington Unit: mm For low-frequency amplification 6.9± 0.1 2.5± 0.1 1.5 1.5 R0.9 1.0 Features R0.9 Forward current transfer ratio hFE is designed high, which is ap- propriate to the driver circuit of motors and printer bammer: hFE = 4000 to 2000. A shunt resistor is omitted from the driver. 0.85 M type package all

4.4. 2sd1205 e.pdf Size:56K _panasonic

2SD1209
2SD1209

Transistor 2SD1205, 2SD1205A Silicon NPN epitaxial planer type darlington Unit: mm For low-frequency amplification 6.9± 0.1 2.5± 0.1 1.5 1.5 R0.9 1.0 Features R0.9 Forward current transfer ratio hFE is designed high, which is ap- propriate to the driver circuit of motors and printer bammer: hFE = 4000 to 2000. A shunt resistor is omitted from the driver. 0.85 M type package all

 4.5. 2sd1208.pdf Size:114K _inchange_semiconductor

2SD1209
2SD1209

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1208 DESCRIPTION ·With TO-3 package ·Wide area of safe operation ·High DC current gain ·Darlington APPLICATIONS ·Power regulator for line operated TV PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings (Ta=25℃) SY

4.6. 2sd1204.pdf Size:185K _inchange_semiconductor

2SD1209
2SD1209

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1204 DESCRIPTION ·Low Collector Saturation Voltage ·High DC Current Gain ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High ruggedness electronic ignitions ·High voltage ignition coil driver ·General purpose power amplifiers ABSOLUTE

4.7. 2sd1202.pdf Size:183K _inchange_semiconductor

2SD1209
2SD1209

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1202 DESCRIPTION ·Low Collector Saturation Voltage ·High DC Current Gain ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High ruggedness electronic ignitions ·High voltage ignition coil driver ·General purpose power amplifiers ABSOLUTE

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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