2SD120H Datasheet. Specs and Replacement

Type Designator: 2SD120H

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 1 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Collector Current |Ic max|: 1.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 1 MHz

Forward Current Transfer Ratio (hFE), MIN: 15

Noise Figure, dB: -

Package: TO39

 2SD120H Substitution

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2SD120H datasheet

 8.1. Size:51K  1

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2SD120H

Transistor 2SD1205, 2SD1205A Silicon NPN epitaxial planer type darlington Unit mm For low-frequency amplification 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 Forward current transfer ratio hFE is designed high, which is ap- propriate to the driver circuit of motors and printer bammer hFE = 4000 to 2000. A shunt resistor is omitted from the driver. 0.85 M type package all... See More ⇒

 8.2. Size:86K  1

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2SD120H

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 8.3. Size:51K  sanyo

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2SD120H

Ordering number EN930D 2SB892 / 2SD1207 SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SB892 / 2SD1207 Large-Current Switching Applications Applications Power supplies, relay drivers, lamp drivers, and automotive wiring. Features FBET and MBIT processed (Original process of SANYO). Low saturation voltage. Large current capacity and ... See More ⇒

 8.4. Size:42K  rohm

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2SD120H

2SB1189 / 2SB1238 / 2SB899F Transistors Transistors 2SD1767 / 2SD1859 / 2SD1200F (96-618-B13) (96-750-D13) 278 ... See More ⇒

Detailed specifications: 2SD1206, 2SD1207, 2SD1207R, 2SD1207S, 2SD1207T, 2SD1207U, 2SD1208, 2SD1209, 2SD2499, 2SD121, 2SD1210, 2SD1211, 2SD1212, 2SD1212Q, 2SD1212R, 2SD1212S, 2SD1213

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