2SD1213R Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SD1213R
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 60 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 20 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 120 MHz
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO247
2SD1213R Transistor Equivalent Substitute - Cross-Reference Search
2SD1213R Datasheet (PDF)
2sd1213.pdf
Ordering number:1022APNP/NPN Epitaxial Planar Silicon Transistors2SB904/2SD121330V/12A High-Speed Switching ApplicationsApplications Package Dimensions Large current switching of relay drivers, high-speedunit:mminverters, converters.2022A[2SB904/2SD1213]Features Low collector-to-emitter saturation voltage : VCE(sat)=0.5V (PNP), 0.4V (NPN) max. Large current
2sd1213.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1213 DESCRIPTION With TO-3PN package Low collector-to-emitter saturation voltage : VCE(sat)= 0.4V(max.) Large current capacity. Complement to type 2SB904 APPLICATIONS Large current switching of relay drivers, high-speed inverters, converters. PINNING PIN DESCRIPTION1 Base Collector;connect
2sd1213.pdf
isc Silicon NPN Power Transistor 2SD1213DESCRIPTIONHigh Collector Current:: I = 20ACLow Collector Saturation Voltage: V = 0.4V(Max)@I = 8ACE(sat) CComplement to Type 2SB904Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for large current switching of relay drivers,high-speed inverters,converters applications
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
