2SD1223 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SD1223
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 4000
Noise Figure, dB: -
Package: TO251
2SD1223 Transistor Equivalent Substitute - Cross-Reference Search
2SD1223 Datasheet (PDF)
2sd1223.pdf
2SD1223 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Darlington) 2SD1223 Switching Applications Unit: mmHammer Drive, Pulse Motor Drive Applications Power Amplifier Applications High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A) Complementary to 2SB908. Absolute Maximum Ratings
2sd1223.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1223DESCRIPTIONHigh DC Current Gain-: h = 2000(Min)@ I = 4AFE CCollector-Emitter Sustaining Voltage-: V = 80V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = 1.5V(Max)@ I = 3ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS
2sd1222.pdf
2SD1222 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (darlington) 2SD1222 Switching Applications Unit: mm Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications High DC current gain: hFE = 2000 (min) (V = 2 V, I = 1 A) CE C Low saturation voltage: V = 1.5 V (max) (I = 2 A) CE (sat) C Complementary to 2SB907. Maximum Ratings (T
2sd1220.pdf
2SD1220 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SD1220 Power Amplifier Applications Unit: mm Complementary to 2SB905 Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 150 VCollector-emitter voltage VCEO 150 VEmitter-base voltage VEBO 6 VCollector current IC 1.5 ABase current IB 1.0 ATa = 25C 1.0 Col
2sd1224.pdf
2SD1224 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (darlington) 2SD1224 Pulse Motor Drive, Hammer Drive Applications Unit: mm Switching Applications Power Amplifier Applications High DC current gain: hFE = 4000 (min) (V = 2 V, I = 150 mA) CE C Low saturation voltage: V = 1.5 V (max) (I = 1 A, I = 1 mA) CE (sat) C BMaximum Ratings (Ta = 25C) Cha
2sd1221.pdf
2SD1221 TOSHIBA Transistor Silicon NPN Diffused Type (PCT process) 2SD1221 Audio Frequency Power Amplifier Application Unit: mm Low collector saturation voltage : V = 4.0 V (typ.) (I = 3 A, I = 0.3 A) CE (sat) C B High power dissipation: P = 20 W (Tc = 25C) C Complementary to 2SB906 Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-b
2sd1229.pdf
Ordering number:1028BPNP/NPN Epitaxial Planar Silicon Darlington Transistors2SB912/2SD1229Driver ApplicationsApplications Package Dimensions Motor drivers, printer hammer drivers, relay drivers,unit:mmvoltage reguraltor control.2022A[2SB912/2SD1229]Features High DC current gain. High current capacity and wide ASO. Low saturation voltage.1 : Base2 : Coll
2sd1221.pdf
SMD Type TransistorsNPN Transistors2SD1221TO-252Unit: mm6.50+0.15-0.15+0.12.30 -0.1 Features5.30+0.2 0.50 +0.8-0.2-0.7 Low collector saturation voltage : VCE (sat) = 0.4 V (typ.) (IC = 3 A, IB = 0.3 A) High power dissipation: PC = 20 W (Tc = 25C) 0.1270.80+0.1 max-0.1 Complementary to 2SB9062.3 0.60+ 0.1 1 Base- 0.1+0.154.60 -0.152
2sd1229.pdf
isc Silicon NPN Darlington Power Transistor 2SD1229DESCRIPTIONHigh DC Current Gain: h = 2000(Min.)@ I = 5A, V = 2VFE C CECollector-Emitter Breakdown Voltage-: V = 60V(Min.)(BR)CEOComplement to Type 2SB912Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for motor drivers, printer hammer drivers, relaydrivers
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
