2SD1226M Datasheet and Replacement

   Type Designator: 2SD1226M
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.7 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 120(typ) MHz
   Collector Capacitance (Cc): 10 pF
   Forward Current Transfer Ratio (hFE), MIN: 82
   Noise Figure, dB: -
   Package: ATR

2SD1226M Substitution

- BJT ⓘ Cross-Reference Search

2SD1226M Datasheet (PDF)

7.1. Size:207K rohm
2sd1226.pdf pdf_icon

8.1. Size:189K 1
2sd1228m 2sd1860.pdf pdf_icon

8.2. Size:505K 1
2sd1766 2sd1758 2sd1862 2sd1189f 2sd1055 2sd1919 2sd1227m.pdf pdf_icon

8.3. Size:183K toshiba
2sd1222.pdf pdf_icon

2SD1222 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (darlington) 2SD1222 Switching Applications Unit: mm Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications High DC current gain: hFE = 2000 (min) (V = 2 V, I = 1 A) CE C Low saturation voltage: V = 1.5 V (max) (I = 2 A) CE (sat) C Complementary to 2SB907. Maximum Ratings (T

8.4. Size:188K toshiba
2sd1220.pdf pdf_icon

2SD1220 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SD1220 Power Amplifier Applications Unit: mm Complementary to 2SB905 Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 150 VCollector-emitter voltage VCEO 150 VEmitter-base voltage VEBO 6 VCollector current IC 1.5 ABase current IB 1.0 ATa = 25C 1.0 Col

8.5. Size:162K toshiba
2sd1224.pdf pdf_icon

2SD1224 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (darlington) 2SD1224 Pulse Motor Drive, Hammer Drive Applications Unit: mm Switching Applications Power Amplifier Applications High DC current gain: hFE = 4000 (min) (V = 2 V, I = 150 mA) CE C Low saturation voltage: V = 1.5 V (max) (I = 1 A, I = 1 mA) CE (sat) C BMaximum Ratings (Ta = 25C) Cha

8.6. Size:157K toshiba
2sd1223.pdf pdf_icon

2SD1223 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Darlington) 2SD1223 Switching Applications Unit: mmHammer Drive, Pulse Motor Drive Applications Power Amplifier Applications High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A) Complementary to 2SB908. Absolute Maximum Ratings

8.7. Size:163K toshiba
2sd1221.pdf pdf_icon

2SD1221 TOSHIBA Transistor Silicon NPN Diffused Type (PCT process) 2SD1221 Audio Frequency Power Amplifier Application Unit: mm Low collector saturation voltage : V = 4.0 V (typ.) (I = 3 A, I = 0.3 A) CE (sat) C B High power dissipation: P = 20 W (Tc = 25C) C Complementary to 2SB906 Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-b

8.8. Size:126K sanyo
2sd1229.pdf pdf_icon

Ordering number:1028BPNP/NPN Epitaxial Planar Silicon Darlington Transistors2SB912/2SD1229Driver ApplicationsApplications Package Dimensions Motor drivers, printer hammer drivers, relay drivers,unit:mmvoltage reguraltor control.2022A[2SB912/2SD1229]Features High DC current gain. High current capacity and wide ASO. Low saturation voltage.1 : Base2 : Coll

8.9. Size:105K rohm
2sd1228.pdf pdf_icon

8.10. Size:132K rohm
2sd1225.pdf pdf_icon

8.11. Size:1307K kexin
2sd1221.pdf pdf_icon

SMD Type TransistorsNPN Transistors2SD1221TO-252Unit: mm6.50+0.15-0.15+0.12.30 -0.1 Features5.30+0.2 0.50 +0.8-0.2-0.7 Low collector saturation voltage : VCE (sat) = 0.4 V (typ.) (IC = 3 A, IB = 0.3 A) High power dissipation: PC = 20 W (Tc = 25C) 0.1270.80+0.1 max-0.1 Complementary to 2SB9062.3 0.60+ 0.1 1 Base- 0.1+0.154.60 -0.152

8.12. Size:216K inchange semiconductor
2sd1229.pdf pdf_icon

isc Silicon NPN Darlington Power Transistor 2SD1229DESCRIPTIONHigh DC Current Gain: h = 2000(Min.)@ I = 5A, V = 2VFE C CECollector-Emitter Breakdown Voltage-: V = 60V(Min.)(BR)CEOComplement to Type 2SB912Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for motor drivers, printer hammer drivers, relaydrivers

8.13. Size:215K inchange semiconductor
2sd1223.pdf pdf_icon

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1223DESCRIPTIONHigh DC Current Gain-: h = 2000(Min)@ I = 4AFE CCollector-Emitter Sustaining Voltage-: V = 80V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = 1.5V(Max)@ I = 3ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS

Datasheet: 2SD1221 , 2SD1221GR , 2SD1221O , 2SD1221Y , 2SD1222 , 2SD1223 , 2SD1224 , 2SD1225M , 2SC2482 , 2SD1227M , 2SD1228M , 2SD1229 , 2SD123 , 2SD1230 , 2SD1231 , 2SD1232 , 2SD1233 .