All Transistors. 2SD1236LR Datasheet

 

2SD1236LR Datasheet and Replacement


   Type Designator: 2SD1236LR
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 90 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 20 MHz
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: TO220
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2SD1236LR Datasheet (PDF)

 6.1. Size:148K  sanyo
 2sd1236l.pdf pdf_icon

2SD1236LR

Ordering number:1796BPNP/NPN Epitaxial Planar Silicon Transistors2SB920L/2SD1236L80V/5A Switching ApplicationsApplications Package Dimensions Relay drivers, high-speed inverters, converters, andunit:mmother general high-current switching applications.2010C[2SB920L/2SD1236L]Features Low-saturation collector-to-emitter voltage : VCE(sat)=0.5V (PNP), 0.4V (NPN) max

 6.2. Size:214K  inchange semiconductor
 2sd1236l.pdf pdf_icon

2SD1236LR

isc Silicon NPN Power Transistors 2SD1236LDESCRIPTIONLow Collector Saturation Voltage: V = 0.4V(Max)@ I = 3ACE(sat) CLarge Current CapacityComplement to Type 2SB920LMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for relay drivers, high-speed inverters,converters,and other general high-current switching applic

 7.1. Size:126K  sanyo
 2sd1236.pdf pdf_icon

2SD1236LR

 7.2. Size:205K  inchange semiconductor
 2sd1236.pdf pdf_icon

2SD1236LR

INCHANGE Semiconductorisc Silicon NPN Power Transistors 2SD1236DESCRIPTIONLow Collector Saturation Voltage: V = 0.4V(Max)@ I = 3ACE(sat) CLarge Current Capacity100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for relay drivers, high-speed inverters,converters,and other general high-curren

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