2SD1239 Datasheet and Replacement

isc Product Specificationisc Silicon NPN Power Transistor 2SD1239DESCRIPTIONHigh Current CapabilityExcellent Safe Operating AreaFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsPower amplifiers .Absolute maximum ratings(Ta=25)SYMBOL PARAMETER VALUE

Ordering number:1034BPNP/NPN Epitaxial Planar Silicon Darlington Transistors2SB913/2SD1230Driver ApplicationsApplications Package Dimensions Motor drivers, printer hammer drivers, relay drivers,unit:mmvoltage regulator control.2022A[2SB913/2SD1230]Features High DC current gain. High current capacity and wide ASO. Low saturation voltage.1 : Base2 : Colle

Ordering number:1046BPNP/NPN Epitaxial Planar Silicon Transistors2SB919/2SD123530V/8A High-Speed Switching ApplicationsApplications Package Dimensions Large current switching of relay drivers, high-speedunit:mminverters, converters.2010C[2SB919/2SD1235]Features Low collector-to-emitter saturation voltage : VCE(sat)=0.5V (PNP), 0.4V (NPN) max. Large current

Ordering number:1798APNP/NPN Epitaxial Planar Silicon Transistors2SB922L/2SD1238L80V/12A Switching ApplicationsApplications Package Dimensions Suittable for relay drivers, high-speed inverters,unit:mmconverters, and other large-current switching appli-2022Acations.[2SB922L/2SD1238L]Features Low collector-to-emitter saturation voltage : VCE(sat)=0.5V (PNP), 0.4

Ordering number:1797BPNP/NPN Epitaxial Planar Silicon Transistors2SB921L/2SD1237L80V/7A Switching ApplicationsApplications Package Dimensions Suitable for relay drivers, high-speed inverters,unit:mmconverters, and other genral large current switching2010Capplications.[2SB921L/2SD1237L]Features Low collector-to-emitter saturation voltage : VCE(sat)=0.5V (PNP),

Ordering number:1796BPNP/NPN Epitaxial Planar Silicon Transistors2SB920L/2SD1236L80V/5A Switching ApplicationsApplications Package Dimensions Relay drivers, high-speed inverters, converters, andunit:mmother general high-current switching applications.2010C[2SB920L/2SD1236L]Features Low-saturation collector-to-emitter voltage : VCE(sat)=0.5V (PNP), 0.4V (NPN) max

INCHANGE Semiconductorisc Silicon NPN Power Transistors 2SD1237DESCRIPTIONLow Collector Saturation Voltage: V = 0.4V(Max)@ I = 4ACE(sat) CLarge Current CapacityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for relay drivers, high-speed inverters,converters,and other general high-current switching applications.

INCHANGE Semiconductorisc Silicon NPN Power Transistors 2SD1236DESCRIPTIONLow Collector Saturation Voltage: V = 0.4V(Max)@ I = 3ACE(sat) CLarge Current Capacity100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for relay drivers, high-speed inverters,converters,and other general high-curren

isc Silicon NPN Darlington Power Transistor 2SD1230DESCRIPTIONHigh DC Current Gain: h = 1500(Min.)@ I = 4A, V = 3VFE C CECollector-Emitter Breakdown Voltage-: V = 100V(Min.)(BR)CEOComplement to Type 2SB913Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for motor drivers, printer hammer drivers, relaydriver

isc Silicon NPN Power Transistors 2SD1235DESCRIPTIONLow Collector Saturation Voltage: V = 0.4V(Max)@ I = 3ACE(sat) CLarge Current CapacityComplement to Type 2SB919Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSLarge current switching of relay drivers, high-speedinverters,converters.ABSOLUTE MAXIMUM RATINGS(T =25)

isc Silicon NPN Power Transistors 2SD1238LDESCRIPTIONLow Collector Saturation Voltage: V = 0.4V(Max)@ I = 6ACE(sat) CWide Area of Safe OperationComplement to Type 2SB922LMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for relay drivers , high-speed inverters,converters,and other general high-current switching

isc Silicon NPN Power Transistors 2SD1238DESCRIPTIONLow Collector Saturation Voltage: V = 0.4V(Max)@ I = 6ACE(sat) CWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for relay drivers , high-speed inverters,converters,and other general high-current switchingapplicationsABSOLUTE MAXIMUM

isc Silicon NPN Power Transistors 2SD1237LDESCRIPTIONLow Collector Saturation Voltage: V = 0.4V(Max)@ I = 4ACE(sat) CLarge Current CapacityComplement to Type 2SB921LMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for relay drivers, high-speed inverters,converters,and other general high-current switching applic

isc Silicon NPN Darlington Power Transistor 2SD1233DESCRIPTIONHigh DC Current Gain: h = 1500(Min.)@ I = 4A, V = 3VFE C CECollector-Emitter Breakdown Voltage-: V = 100V(Min.)(BR)CEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for motor drivers, printer hammer drivers, relaydrivers, voltage regulator control

isc Silicon NPN Power Transistors 2SD1236LDESCRIPTIONLow Collector Saturation Voltage: V = 0.4V(Max)@ I = 3ACE(sat) CLarge Current CapacityComplement to Type 2SB920LMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for relay drivers, high-speed inverters,converters,and other general high-current switching applic