2SD1241 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SD1241
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 60 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: TO220
2SD1241 Transistor Equivalent Substitute - Cross-Reference Search
2SD1241 Datasheet (PDF)
2sd1241.pdf
isc Product Specificationisc Silicon NPN Power Transistor 2SD1241DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOHigh Current CapabilityExcellent Safe Operating AreaFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsPower amplifie
2sd1246.pdf
Ordering number:1030EPNP/NPN Epitaxial Planar Silicon Transistors2SB926/2SD1246Large-Current Driving ApplicationsApplications Package Dimensions Power supplies, relay drivers, lamp drivers, electricalunit:mmequipment.2003A[2SB926/2SD1246]Features Adoption of FBET, MBIT processes. Low saturation voltage. Large current capacity and wide ASO.JEDEC : TO-92 B
2sd1247.pdf
Ordering number:1029CPNP/NPN Epitaxial Planar Silicon Transistors2SB927/2SD1247Large-Current Driving ApplicationsApplications Package Dimensions Power supplies, relay drivers, lamp drivers, electricalunit:mmequipment.2006A[2SB927/2SD1247]Features Adoption of FBET, MBIT processes. Low saturation voltage. Large current capacity and wide ASO.( ) : 2SB927 EIA
2sd1244 e.pdf
Transistor2SD1244Silicon NPN epitaxial planer typeFor low-frequency power amplificationUnit: mm6.9 0.1 2.5 0.11.51.5 R0.9 1.0FeaturesR0.9Low collector to emitter saturation voltage VCE(sat).Satisfactory operation performances at high efficiency with thelow-voltage power supply.M type package allowing easy automatic and manual insertion as0.85well as stand-alone
2sd1244.pdf
Transistor2SD1244Silicon NPN epitaxial planer typeFor low-frequency power amplificationUnit: mm6.9 0.1 2.5 0.11.51.5 R0.9 1.0FeaturesR0.9Low collector to emitter saturation voltage VCE(sat).Satisfactory operation performances at high efficiency with thelow-voltage power supply.M type package allowing easy automatic and manual insertion as0.85well as stand-alone
2sd1242.pdf
isc Product Specificationisc Silicon NPN Power Transistor 2SD1242DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOHigh Current CapabilityExcellent Safe Operating AreaFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsPower amplifie
2sd1248.pdf
isc Silicon NPN Darlington Power Transistor 2SD1248DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOHigh DC Current Gain: h = 1000(Min) @I = 4AFE CLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifiers applications.ABSOLUTE MAX
2sd1245.pdf
isc Silicon NPN Darlington Power Transistor 2SD1245DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh DC Current Gain: h = 500(Min) @I = 2AFE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier and Motor controlABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL
2sd1243.pdf
isc Product Specificationisc Silicon NPN Power Transistor 2SD1243DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOHigh Current CapabilityExcellent Safe Operating AreaFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsPower amplifie
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , A1015 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
