2SD1247T Datasheet. Specs and Replacement
Type Designator: 2SD1247T
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 2.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 19 pF
Forward Current Transfer Ratio (hFE), MIN: 200
Noise Figure, dB: -
Package: TO92
- BJT ⓘ Cross-Reference Search
2SD1247T datasheet
7.2. Size:88K sanyo
2sd1247.pdf 
Ordering number 1029C PNP/NPN Epitaxial Planar Silicon Transistors 2SB927/2SD1247 Large-Current Driving Applications Applications Package Dimensions Power supplies, relay drivers, lamp drivers, electrical unit mm equipment. 2006A [2SB927/2SD1247] Features Adoption of FBET, MBIT processes. Low saturation voltage. Large current capacity and wide ASO. ( ) 2SB927 EIA... See More ⇒
8.2. Size:85K sanyo
2sd1246.pdf
Ordering number 1030E PNP/NPN Epitaxial Planar Silicon Transistors 2SB926/2SD1246 Large-Current Driving Applications Applications Package Dimensions Power supplies, relay drivers, lamp drivers, electrical unit mm equipment. 2003A [2SB926/2SD1246] Features Adoption of FBET, MBIT processes. Low saturation voltage. Large current capacity and wide ASO. JEDEC TO-92 B ... See More ⇒
8.3. Size:44K panasonic
2sd1244 e.pdf
Transistor 2SD1244 Silicon NPN epitaxial planer type For low-frequency power amplification Unit mm 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the low-voltage power supply. M type package allowing easy automatic and manual insertion as 0.85 well as stand-alone... See More ⇒
8.4. Size:40K panasonic
2sd1244.pdf
Transistor 2SD1244 Silicon NPN epitaxial planer type For low-frequency power amplification Unit mm 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the low-voltage power supply. M type package allowing easy automatic and manual insertion as 0.85 well as stand-alone... See More ⇒
8.5. Size:191K inchange semiconductor
2sd1242.pdf
isc Product Specification isc Silicon NPN Power Transistor 2SD1242 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO High Current Capability Excellent Safe Operating Area Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators Power amplifie... See More ⇒
8.6. Size:210K inchange semiconductor
2sd1248.pdf
isc Silicon NPN Darlington Power Transistor 2SD1248 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO High DC Current Gain h = 1000(Min) @I = 4A FE C Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifiers applications. ABSOLUTE MAX... See More ⇒
8.7. Size:208K inchange semiconductor
2sd1245.pdf
isc Silicon NPN Darlington Power Transistor 2SD1245 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High DC Current Gain h = 500(Min) @I = 2A FE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier and Motor control ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL... See More ⇒
8.8. Size:191K inchange semiconductor
2sd1243.pdf
isc Product Specification isc Silicon NPN Power Transistor 2SD1243 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO High Current Capability Excellent Safe Operating Area Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators Power amplifie... See More ⇒
8.9. Size:191K inchange semiconductor
2sd1241.pdf
isc Product Specification isc Silicon NPN Power Transistor 2SD1241 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO High Current Capability Excellent Safe Operating Area Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators Power amplifie... See More ⇒
Detailed specifications: 2SD1246, 2SD1246R, 2SD1246S, 2SD1246T, 2SD1246U, 2SD1247, 2SD1247R, 2SD1247S, 2N2222A, 2SD1247U, 2SD1248, 2SD1249, 2SD1249A, 2SD124A, 2SD124AH, 2SD125, 2SD1250
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