2SD125 Datasheet and Replacement

Power Transistors2SD1258Silicon NPN triple diffusion planar typeUnit: mm8.5 0.2 3.4 0.3For power amplification with high forward current transfer ratio6.0 0.5 1.0 0.1Features1.5max. 1.1max.High foward current transfer ratio hFESatisfactory linearity of foward current transfer ratio hFE0.8 0.1 0.5max.N type package enabling direct soldering of the radiating fin

Power Transistors2SD1256Silicon NPN epitaxial planar typeUnit: mm8.5 0.2 3.4 0.3For power switching6.0 0.5 1.0 0.1Complementary to 2SB933Features1.5max. 1.1max.Low collector to emitter saturation voltage VCE(sat)Satisfactory linearity of foward current transfer ratio hFE0.8 0.1 0.5max.Large collector current IC2.54 0.3N type package enabling direct sold

Power Transistors2SD1254Silicon NPN epitaxial planar typeUnit: mm8.5 0.2 3.4 0.3For power switching6.0 0.5 1.0 0.1Complementary to 2SB931Features1.5max. 1.1max.Low collector to emitter saturation voltage VCE(sat)Satisfactory linearity of foward current transfer ratio hFE0.8 0.1 0.5max.Large collector current IC2.54 0.3N type package enabling direct sold

Power Transistors2SD1259, 2SD1259ASilicon NPN triple diffusion planar typeUnit: mm8.5 0.2 3.4 0.3For power amplification with high forward current transfer ratio6.0 0.5 1.0 0.1FeaturesHigh foward current transfer ratio hFE1.5max. 1.1max.Satisfactory linearity of foward current transfer ratio hFEN type package enabling direct soldering of the radiating fin to0.8

Power Transistors2SD1252, 2SD1252ASilicon NPN triple diffusion planar typeUnit: mm8.5 0.2 3.4 0.3For power amplification6.0 0.5 1.0 0.1Complementary to 2SB929 and 2SB929AFeaturesHigh forward current transfer ratio hFE which has satisfactory linearity1.5max. 1.1max.Low collector to emitter saturation voltage VCE(sat)N type package enabling direct soldering of the

Power Transistors2SD1251, 2SD1251ASilicon NPN triple diffusion junction typeUnit: mm8.5 0.2 3.4 0.3For power amplification6.0 0.5 1.0 0.1FeaturesWide area of safe operation (ASO)1.5max. 1.1max.N type package enabling direct soldering of the radiating fin tothe printed circuit board, etc. of small electronic equipment.0.8 0.1 0.5max.Absolute Maximum Ratings (T

Power Transistors2SD1253, 2SD1253ASilicon NPN triple diffusion planar typeUnit: mm8.5 0.2 3.4 0.3For power amplification6.0 0.5 1.0 0.1Complementary to 2SB930 and 2SB930AFeaturesHigh forward current transfer ratio hFE which has satisfactory linearity1.5max. 1.1max.Low collector to emitter saturation voltage VCE(sat)N type package enabling direct soldering of the

Power Transistors2SD1257, 2SD1257ASilicon NPN epitaxial planar typeUnit: mmFor power switching8.5 0.2 3.4 0.36.0 0.5 1.0 0.1Complementary to 2SB934FeaturesLow collector to emitter saturation voltage VCE(sat)1.5max. 1.1max.Satisfactory linearity of foward current transfer ratio hFELarge collector current IC0.8 0.1 0.5max.N type package enabling direct solder

SMD Type TransistorsNPN Transistors2SD1256TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Features Satisfactory linearity of foward current transfer ratio hFE Low collector to emitter saturation voltage VCE(sat) Large collector current IC0.127+0.10.80-0.1max Complementary to 2SB933+ 0.11 Base2.3 0.60- 0.1+0.1

SMD Type TransistorsNPN Transistors2SD1253ATO-252 Unit: mm+0.15 Features6.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat)0.127+0.1 Complementary to 2SB930A0.80-0.1max+ 0.11 Base2.3 0.60- 0.1+0.154.60 -0.152

SMD Type TransistorsNPN Transistors2SD1255TO-252Unit: mm+0.156.50-0.15+0.1 Features2.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat)0.127+0.1 Large collector current IC0.80-0.1max Complementary to 2SB932+ 0.11 Base2.3

SMD Type TransistorsNPN Transistors2SD1254TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1 Features+0.25.30-0.2 +0.80.50 -0.7 High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat)0.127+0.10.80-0.1 Large collector current IC max Complementary to 2SB931+ 0.11 Base2.3 0

SMD Type TransistorsNPN Transistors2SD1257ATO-252Unit: mm+0.156.50-0.15+0.1 Features 2.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Satisfactory linearity of foward current transfer ratio hFE Low collector to emitter saturation voltage VCE(sat) Large collector current IC0.127+0.10.80-0.1max+ 0.11 Base2.3 0.60- 0.1+0.154 .60 -0.152 Collector3

SMD Type TransistorsNPN Transistors2SD1250TO-252Unit: mm+0.156.50-0.15 Features +0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat)0.127 Complementary to 2SB928 +0.10.80-0.1max+ 0.11 Base2.3 0.60- 0.1+0.154 .60 -0.152 Co

SMD Type TransistorsNPN Transistors2SD1250ATO-252Unit: mm+0.156.50-0.15 Features +0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat)0.127 Complementary to 2SB928 +0.10.80-0.1max+ 0.11 Base2.3 0.60- 0.1+0.154 .60 -0.152 C

SMD Type TransistorsNPN Transistors2SD1252TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Features High forward current transfer ratio hFE which has satisfactory linearity0.127+0.1 Low collector to emitter saturation voltage VCE(sat)0.80-0.1max Complementary to 2SB929+ 0.11 Base2.3 0.60- 0.1+0.154 .60 -0.152

SMD Type TransistorsNPN Transistors2SD1252ATO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Features High forward current transfer ratio hFE which has satisfactory linearity0.127+0.1 Low collector to emitter saturation voltage VCE(sat)0.80-0.1max Complementary to 2SB929A+ 0.11 Base2.3 0.60- 0.1+0.154 .60 -0.15

SMD Type TransistorsNPN Transistors2SD1253TO-252 Unit: mm+0.15 Features6.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat)0.127+0.1 Complementary to 2SB9300.80-0.1max+ 0.11 Base2.3 0.60- 0.1+0.154.60 -0.152 Co

SMD Type TransistorsNPN Transistors2SD1257TO-252Unit: mm+0.156.50-0.15+0.1 Features 2.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Satisfactory linearity of foward current transfer ratio hFE Low collector to emitter saturation voltage VCE(sat) Large collector current IC0.127+0.1 Complementary to 2SB934 0.80-0.1max+ 0.11 Base2.3 0.60- 0.1+0.15

isc Silicon NPN Power Transistor 2SD1255DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 0.5V(Max.)@ I = 3.0ACE(sat) CFast Switching SpeedMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSPower amplifier applicationsSwitching regulatorsABSOLUT