All Transistors. 2SD1252 Datasheet

 

2SD1252 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SD1252

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 35 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 150 °C

Forward Current Transfer Ratio (hFE), MIN: 80

Noise Figure, dB: -

Package: TO251

2SD1252 Transistor Equivalent Substitute - Cross-Reference Search

 

2SD1252 Datasheet (PDF)

1.1. 2sd1252.pdf Size:49K _panasonic

2SD1252
2SD1252

Power Transistors 2SD1252, 2SD1252A Silicon NPN triple diffusion planar type Unit: mm 8.5 0.2 3.4 0.3 For power amplification 6.0 0.5 1.0 0.1 Complementary to 2SB929 and 2SB929A Features High forward current transfer ratio hFE which has satisfactory linearity 1.5max. 1.1max. Low collector to emitter saturation voltage VCE(sat) N type package enabling direct soldering of the radiati

1.2. 2sd1252a.pdf Size:1144K _kexin

2SD1252
2SD1252

SMD Type Transistors NPN Transistors 2SD1252A TO-252 Unit: mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 ■ Features ● High forward current transfer ratio hFE which has satisfactory linearity 0.127 +0.1 ● Low collector to emitter saturation voltage VCE(sat) 0.80-0.1 max ● Complementary to 2SB929A + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4 .60 -0.15

 1.3. 2sd1252.pdf Size:1147K _kexin

2SD1252
2SD1252

SMD Type Transistors NPN Transistors 2SD1252 TO-252 Unit: mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 ■ Features ● High forward current transfer ratio hFE which has satisfactory linearity 0.127 +0.1 ● Low collector to emitter saturation voltage VCE(sat) 0.80-0.1 max ● Complementary to 2SB929 + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4 .60 -0.15 2

Datasheet: 2SD1249A , 2SD124A , 2SD124AH , 2SD125 , 2SD1250 , 2SD1250A , 2SD1251 , 2SD1251A , S9013 , 2SD1252A , 2SD1253 , 2SD1253A , 2SD1254 , 2SD1255 , 2SD1256 , 2SD1257 , 2SD1257A .

 
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