All Transistors. 2SD1262 Datasheet

 

2SD1262 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SD1262

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 45 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector Current |Ic max|: 8 A

Max. Operating Junction Temperature (Tj): 150 °C

Forward Current Transfer Ratio (hFE), MIN: 1500

Noise Figure, dB: -

Package: TO251

2SD1262 Transistor Equivalent Substitute - Cross-Reference Search

 

2SD1262 Datasheet (PDF)

1.1. 2sd1262.pdf Size:64K _panasonic

2SD1262
2SD1262

Power Transistors 2SD1262, 2SD1262A Silicon NPN triple diffusion planar type Darlington Unit: mm For midium speed power switching 8.5± 0.2 3.4± 0.3 6.0± 0.5 1.0± 0.1 Complementary to 2SB939 and 2SB939A Features High foward current transfer ratio hFE 1.5max. 1.1max. High-speed switching 0.8± 0.1 0.5max. N type package enabling direct soldering of the radiating fin to the printed circui

4.1. 2sd1266.pdf Size:47K _panasonic

2SD1262
2SD1262

Power Transistors 2SD1266, 2SD1266A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB941 and 2SB941A Unit: mm Features High forward current transfer ratio hFE which has satisfactory linearity 10.0± 0.2 4.2± 0.2 Low collector to emitter saturation voltage VCE(sat) 5.5± 0.2 2.7± 0.2 Full-pack package which can be installed to the heat sink with one scr

4.2. 2sd1260.pdf Size:64K _panasonic

2SD1262
2SD1262

Power Transistors 2SD1260, 2SD1260A Silicon NPN triple diffusion planar type Darlington Unit: mm For power amplification 8.5± 0.2 3.4± 0.3 6.0± 0.5 1.0± 0.1 Complementary to 2SB937 and 2SB937A Features High foward current transfer ratio hFE 1.5max. 1.1max. High-speed switching N type package enabling direct soldering of the radiating fin to 0.8± 0.1 0.5max. the printed circuit board,

4.3. 2sd1267.pdf Size:47K _panasonic

2SD1262
2SD1262

Power Transistors 2SD1267, 2SD1267A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB942 and 2SB942A Unit: mm Features 10.0± 0.2 4.2± 0.2 High forward current transfer ratio hFE which has satisfactory linearity 5.5± 0.2 2.7± 0.2 Low collector to emitter saturation voltage VCE(sat) Full-pack package which can be installed to the heat sink with one scr

4.4. 2sd1263.pdf Size:46K _panasonic

2SD1262
2SD1262

Power Transistors 2SD1263, 2SD1263A Silicon NPN triple diffusion planar type For power amplification Unit: mm Features 10.0± 0.2 4.2± 0.2 High collector to base voltage VCBO 5.5± 0.2 2.7± 0.2 Full-pack package which can be installed to the heat sink with one screw ? 3.1± 0.1 Absolute Maximum Ratings (TC=25?C) Parameter Symbol Ratings Unit Collector to 2SD1263 350 1.3± 0.2 1.4± 0.1

4.5. 2sd1269.pdf Size:55K _panasonic

2SD1262
2SD1262

Power Transistors 2SD1269 Silicon NPN epitaxial planar type For power switching Unit: mm Complementary to 2SB944 10.0± 0.2 4.2± 0.2 5.5± 0.2 2.7± 0.2 Features Low collector to emitter saturation voltage VCE(sat) ? 3.1± 0.1 Satisfactory linearity of foward current transfer ratio hFE Large collector current IC Full-pack package which can be installed to the heat sink with one screw 1.

4.6. 2sd1261.pdf Size:64K _panasonic

2SD1262
2SD1262

Power Transistors 2SD1261, 2SD1261A Silicon NPN triple diffusion planar type Darlington Unit: mm For power amplification 8.5± 0.2 3.4± 0.3 6.0± 0.5 1.0± 0.1 Complementary to 2SB938 and 2SB938A Features High foward current transfer ratio hFE High-speed switching 1.5max. 1.1max. N type package enabling direct soldering of the radiating fin to 0.8± 0.1 0.5max. the printed circuit boa

4.7. 2sd1264.pdf Size:45K _panasonic

2SD1262
2SD1262

Power Transistors 2SD1264, 2SD1264A Silicon NPN triple diffusion planar type For low-freauency power amplification Unit: mm For TV vertical deflection output 10.0± 0.2 4.2± 0.2 Complementary to 2SB940 and 2SB940A 5.5± 0.2 2.7± 0.2 Features ? 3.1± 0.1 High collector to emitter VCEO Large collector power dissipation PC Full-pack package which can be installed to the heat sink with one

4.8. 2sd1268.pdf Size:47K _panasonic

2SD1262
2SD1262

Power Transistors 2SD1268 Silicon NPN epitaxial planar type For power switching Unit: mm Complementary to 2SB943 10.0± 0.2 4.2± 0.2 5.5± 0.2 2.7± 0.2 Features Low collector to emitter saturation voltage VCE(sat) ? 3.1± 0.1 Satisfactory linearity of foward current transfer ratio hFE Large collector current IC Full-pack package which can be installed to the heat sink with one screw 1.

4.9. 2sd1265.pdf Size:69K _wingshing

2SD1262

2SD1265 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT SC-67 ABSOLUTE MAXIMUM RATINGS (T =25? ?) ? ? A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 60 V Emitter-Base voltage VEBO 5 V Collector Current (DC) IC 4 A Collector Dissipation (Tc=25? PC 30 W ? ? ? Junction Temperature Tj 150 ? ?

4.10. 2sd1264 2sd1264a.pdf Size:102K _inchange_semiconductor

2SD1262
2SD1262

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1264 2SD1264A DESCRIPTION · ·With TO-220Fa package ·Complement to type 2SB940/940A ·High collector to emitter voltage VCEO ·Large collector power dissipation PC APPLICATIONS ·For power amplification ·For TV vertical deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector

4.11. 2sd1263 2sd1263a.pdf Size:103K _inchange_semiconductor

2SD1262
2SD1262

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1263 2SD1263A DESCRIPTION · ·With TO-220Fa package ·High breakdown voltalge APPLICATIONS ·For power amplification PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2SD1263

4.12. 2sd1266.pdf Size:60K _inchange_semiconductor

2SD1262
2SD1262

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1266 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 1.2V(Max)@ IC= 3A ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 60V (Min) ·Good Linearity of hFE ·Complement to Type 2SB941 APPLICATIONS ·Designed for power amplification. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE

4.13. 2sd1266 2sd1266a.pdf Size:103K _inchange_semiconductor

2SD1262
2SD1262

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1266 2SD1266A DESCRIPTION ·With TO-220Fa package ·High forward current transfer ratio hFE which has satisfactory linearity ·Low collector saturation voltage ·Complement to type 2SB941/941A APPLICATIONS ·For power amplification PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outl

4.14. 2sd1265 2sd1265a.pdf Size:79K _inchange_semiconductor

2SD1262
2SD1262

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1265 2SD1265A DESCRIPTION ·With TO-220Fa package ·Low collector saturation voltage ·Wide area of safe operation APPLICATIONS ·For audio frequency power applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol 3 Emitter Absolute maximum ratings(Ta=2

4.15. 2sd1268.pdf Size:273K _inchange_semiconductor

2SD1262
2SD1262

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1268 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC= 2A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min) ·Good Linearity of hFE ·Complement to Type 2SB943 APPLICATIONS ·Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBO

4.16. 2sd1267 2sd1267a.pdf Size:105K _inchange_semiconductor

2SD1262
2SD1262

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1267 2SD1267A DESCRIPTION ·With TO-220Fa package ·High forward current transfer ratio hFE which has satisfactory linearity ·Low collector saturation voltage ·Complement to type 2SB942/942A APPLICATIONS ·For power amplification PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute m

Datasheet: 2SD1259A , 2SD125A , 2SD125AH , 2SD126 , 2SD1260 , 2SD1260A , 2SD1261 , 2SD1261A , MD1803DFX , 2SD1262A , 2SD1263 , 2SD1263A , 2SD1264 , 2SD1264A , 2SD1265 , 2SD1265A , 2SD1266 .

 


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