All Transistors. 2SD1266A Datasheet


2SD1266A Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SD1266A

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 35 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 150 °C

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TO220

2SD1266A Transistor Equivalent Substitute - Cross-Reference Search


2SD1266A Datasheet (PDF)

1.1. 2sd1266 2sd1266a.pdf Size:103K _inchange_semiconductor


Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1266 2SD1266A DESCRIPTION ·With TO-220Fa package ·High forward current transfer ratio hFE which has satisfactory linearity ·Low collector saturation voltage ·Complement to type 2SB941/941A APPLICATIONS ·For power amplification PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outl

3.1. 2sd1266.pdf Size:47K _panasonic


Power Transistors 2SD1266, 2SD1266A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB941 and 2SB941A Unit: mm Features High forward current transfer ratio hFE which has satisfactory linearity 10.0 0.2 4.2 0.2 Low collector to emitter saturation voltage VCE(sat) 5.5 0.2 2.7 0.2 Full-pack package which can be installed to the heat sink with one scr

3.2. 2sd1266.pdf Size:60K _inchange_semiconductor


INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1266 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 1.2V(Max)@ IC= 3A ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 60V (Min) ·Good Linearity of hFE ·Complement to Type 2SB941 APPLICATIONS ·Designed for power amplification. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .


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