2SD1271 Datasheet and Replacement

Power Transistors2SD1271, 2SD1271ASilicon NPN epitaxial planar typeFor power switchingComplementary to 2SB946 and 2SB946A Unit: mm10.0 0.2 4.2 0.2Features5.5 0.2 2.7 0.2Low collector to emitter saturation voltage VCE(sat)Satisfactory linearity of foward current transfer ratio hFE 3.1 0.1Large collector current ICFull-pack package which can be installed to the

isc Silicon NPN Power Transistor 2SD1271DESCRIPTIONLow Collector Saturation Voltage: V = 0.5V(Max)@ I = 5ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 80V (Min)(BR)CEOGood Linearity of hFEComplement to Type 2SB946Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.A

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1271 2SD1271A DESCRIPTION With TO-220Fa package Complement to type 2SB946/946A Low collector saturation voltage Good linearity of hFE Large collector current IC APPLICATIONS For power switching applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-

Power Transistors www.jmnic.com 2SD1271A Silicon NPN Transistors B C E Features For Power Switching. With TO-220Fa package Complement to type 2SB946 Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNITVCBO Collector to base voltage 150 V VCEO Collector to emitter voltage 100 V VEBO Emitter to base voltage 7 V ICP Peak collector current 15 A IC Coll

isc Silicon NPN Power Transistor 2SD1271ADESCRIPTIONLow Collector Saturation Voltage: V = 0.5V(Max)@ I = 5ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 100V (Min)(BR)CEOGood Linearity of hFEComplement to Type 2SB946AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplification.ABSOLUT

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

Power Transistors2SD1272Silicon NPN triple diffusion planar typeFor high-speed switching and high current amplification ratioUnit: mm10.0 0.2 4.2 0.25.5 0.2 2.7 0.2FeaturesHigh foward current transfer ratio hFE 3.1 0.1Satisfactory linearity of foward current transfer ratio hFEFull-pack package which can be installed to the heat sink withone screw1.3 0.2

Power Transistors2SD1273, 2SD1273ASilicon NPN triple diffusion planar typeFor power amplification with high forward current transfer ratioUnit: mmComplementary to 2SB129910.0 0.2 4.2 0.25.5 0.2 2.7 0.2FeaturesHigh foward current transfer ratio hFE 3.1 0.1Satisfactory linearity of foward current transfer ratio hFEFull-pack package which can be installed to the

Power Transistors2SD1276, 2SD1276ASilicon NPN triple diffusion planar type DarlingtonUnit: mmFor power amplification10.0 0.2 4.2 0.25.5 0.2 2.7 0.2Complementary to 2SB950 and 2SB950AFeaturesHigh foward current transfer ratio hFE 3.1 0.1High-speed switchingFull-pack package which can be installed to the heat sink withone screw1.3 0.21.4 0.1Absolute

Power Transistors2SD1274, 2SD1274A, 2SD1274BSilicon NPN triple diffusion planar typeFor power amplificationUnit: mmFeatures 10.0 0.2 4.2 0.25.5 0.2 2.7 0.2 High collector to base voltage VCBO High-speed switching Full-pack package which can be installed to the heat sink with 3.1 0.1one screwAbsolute Maximum Ratings (TC=25C)1.3 0.2Parameter Symbol Ra

Power Transistors2SD1277, 2SD1277ASilicon NPN triple diffusion planar type DarlingtonFor midium speed power switchingUnit: mm10.0 0.2 4.2 0.2Complementary to 2SB951 and 2SB951A5.5 0.2 2.7 0.2Features High foward current transfer ratio hFE 3.1 0.1 High-speed switching Full-pack package which can be installed to the heat sink withone screw1.3 0.21.4 0

Power Transistors2SD1270Silicon NPN epitaxial planar typeFor power switchingUnit: mmComplementary to 2SB94510.0 0.2 4.2 0.25.5 0.2 2.7 0.2FeaturesLow collector to emitter saturation voltage VCE(sat) 3.1 0.1Satisfactory linearity of foward current transfer ratio hFELarge collector current ICFull-pack package which can be installed to the heat sink withone

Power Transistors2SD1275, 2SD1275ASilicon NPN triple diffusion planar type DarlingtonUnit: mmFor power amplification10.0 0.2 4.2 0.2Complementary to 2SB949 and 2SB949A 5.5 0.2 2.7 0.2Features 3.1 0.1High foward current transfer ratio hFEHigh-speed switchingFull-pack package which can be installed to the heat sink withone screw1.3 0.21.4 0.1Absolute

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1275 2SD1275A DESCRIPTION With TO-220Fa package Complement to type 2SB949,2SB949A High forward current transfer ratio hFE High-speed switching APPLICATIONS For power amplification PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-220Fa) and symbol ABSOLUTE MA

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1277 2SD1277A DESCRIPTION With TO-220Fa package Complement to type 2SB951 and 2SB951A High forward current transfer ratio hFE High-speed switching APPLICATIONS For medium speed power switching PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-220Fa) and symbol

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1274 2SD1274A 2SD1274B DESCRIPTION With TO-220Fa package High VCBO High speed switching APPLICATIONS Power amplifier applicaitons PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-220Fa) and symbol ABSOLUTE MAXIMUM RATINGS AT Tc=25 SYMBOL PARAMETER CONDITI

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1276 2SD1276A DESCRIPTION With TO-220Fa package Complement to type 2SB950 and 2SB950A High forward current transfer ratio hFE High-speed switching APPLICATIONS For power amplification PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-220Fa) and symbol ABSOLUT

2SD1273(A)F(BR3DA1273(A)F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F NPN Silicon NPN transistor in a TO-220F Plastic Package. / Features h FEPower amplifier with high forward current transfer ratio applications. / Applications h FEHigh hFE, good linearity of hFE.

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1278DESCRIPTIONHigh Breakdown Voltage-: V = 1200V (Min)CBOHigh Reliability100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage power switching TV horizontaldeflection output applications.ABSOLUTE MAXIMUM RATINGS(T =2

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1276DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V (Min)(BR)CEOHigh Speed SwitchingComplement to Type 2SB950100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for medium speed power switching applications.ABS

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1275 2SD1275A DESCRIPTION With TO-220Fa package Complement to type 2SB949/949A High DC current gain High-speed switching APPLICATIONS For power amplification PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220Fa) and symbol3 EmitterAbsolute maximum ratings

isc Silicon NPN Power Transistor 2SD1274DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 80V (Min)CEO(SUS)High Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplification.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 150 VCBOV Colle

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1277 2SD1277A DESCRIPTION With TO-220Fa package Complement to type 2SB951/951A High DC current gain High-speed switching APPLICATIONS For medium speed power switching PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220Fa) and symbol3 EmitterAbsolute maximum

isc Silicon NPN Darlington Power Transistor 2SD1277DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V (Min)(BR)CEOHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for medium speed power switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-B

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1279DESCRIPTIONHigh Breakdown Voltage-: V = 1400V (Min)CBOLow Collector-Emitter Saturation Voltage-: V = 5.0V(Max.)@ I = 8.0ACE(sat) CFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage power

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1274 2SD1274A 2SD1274B DESCRIPTION With TO-220Fa package High VCBO High speed switching APPLICATIONS Power amplifier applicaitons PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220Fa) and symbol3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER

isc Silicon NPN Power Transistor 2SD1270DESCRIPTIONLow Collector Saturation Voltage: V = 0.5V(Max)@ I = 4ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 80V (Min)(BR)CEOGood Linearity of hFEComplement to Type 2SB945Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.A

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1276 2SD1276A DESCRIPTION With TO-220Fa package Complement to type 2SB950/950A High DC current gain High-speed switching APPLICATIONS For power amplification PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220Fa) and symbol3 EmitterAbsolute maximum ratings