2SD1284 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SD1284
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: TO220
2SD1284 Transistor Equivalent Substitute - Cross-Reference Search
2SD1284 Datasheet (PDF)
4.1. 2sd1286.pdf 
Size:225K _nec
4.2. 2sd1280 e.pdf Size:52K _panasonic
Transistor 2SD1280 Silicon NPN epitaxial planer type For low-voltage type medium output power amplification Unit: mm 1.5 0.1 4.5 0.1 1.6 0.2 Features Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the 45 low-voltage power supply. Mini Power type package, allowing downsizing of the equipment 0.4 0.08 and automati
4.3. 2sd1280.pdf Size:48K _panasonic
Transistor 2SD1280 Silicon NPN epitaxial planer type For low-voltage type medium output power amplification Unit: mm 1.5 0.1 4.5 0.1 1.6 0.2 Features Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the 45 low-voltage power supply. Mini Power type package, allowing downsizing of the equipment 0.4 0.08 and automati
4.4. 2sd1288.pdf Size:37K _no
4.5. 2sd1280.pdf Size:1058K _kexin
SMD Type Transistors NPN Transistors 2SD1280 1.70 0.1 ■ Features ● Satisfactory operation performances at high efficiency with the low-voltage power supply. ● Low collector to emitter saturation voltage VCE(sat) 0.42 0.1 0.46 0.1 ● Complementary to 2SB956 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Ba
Datasheet: 2N3181 , 2N3182 , 2N3183 , 2N3184 , 2N3185 , 2N3186 , 2N3187 , 2N3188 , BC547B , 2N319 , 2N3190 , 2N3191 , 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 .
